Ceramic element, method for producing ceramic element, display device, relay device, and capacitor

ABSTRACT

A ceramic element including a main actuator element  26  having an anti-ferroelectric film  22  and a pair of electrodes  24   a   , 24   b  formed on a first principal surface (front surface) of the anti-ferroelectric film  22,  a vibrating section  18  for supporting the main actuator element  26,  and a fixed section  20  for supporting the vibrating section  18  in a vibrating manner. The anti-ferroelectric film  22  after polarization has a region Zt in which its average dielectric constant is increased in an analog manner in accordance with a voltage V applied to the pair of electrodes  24   a   , 24   b . Specifically, an expression of p/t≦2.5 is satisfied provided that an average film thickness of the anti-ferroelectric film  22  is t, and a pitch between the pair of electrodes  24   a   , 24   b  is p.

TECHNICAL FIELD

[0001] The present invention relates to an element for convertingelectric energy into mechanical energy to be used, for example, foractuators, various vibrators, displays, and relays, or a capacitorelement to be used, for example, for filters and resonance circuits. Inparticular, the present invention relates to a ceramic element based onthe use of the phase transition between the anti-ferroelectric phase andthe ferroelectric phase, a display device based on the ceramic elementto be used for driving a picture element (image pixel) to performdisplay, a relay device based on the ceramic element to be used fordriving a relay to perform switching, and a capacitor based on theceramic element to be used for varying the capacitance.

BACKGROUND ART

[0002] Recently, it has been demanded, for example, in the fields ofoptics and precision manufacturing, to use a displacement element foradjusting the optical path length or the position on the order ofsubmicron.

[0003] In order to respond to such a demand, development is beingadvanced for actuators which utilize occurrence of displacement based onthe inverse piezoelectric effect caused when an electric field isapplied to a piezoelectric material such as a ferroelectric substance.

[0004] In such a trend, the present applicant has also previouslyproposed piezoelectric/electrostrictive film-type elements made ofceramics, which can be preferably used for various applications, asdescribed, for example, in Japanese Laid-Open Patent Publication Nos.3-128681 and 5-49270.

[0005] The previously proposed piezoelectric/electrostrictive film-typeelement has such excellent features that it serves as a compact andinexpensive electromechanical conversion element with high reliabilityto provide a large displacement at a low driving voltage, in which theresponse speed is quick, and the generated force is large. Thepiezoelectric/electrostrictive film-type element is useful to be used,for example, as a constituting component of actuators, displays, andrelays.

[0006] The piezoelectric/electrostrictive film-type element describedabove is operated such that the mechanical displacement is obtained inaccordance with the inverse piezoelectric effect or the electrostrictiveeffect by applying a voltage to the piezoelectric/electrostrictiveoperating section (actuator element). Therefore, thepiezoelectric/electrostrictive film-type element is advantageous in thatthe magnitude of the displacement amount can be precisely controlledwith respect to the applied voltage, while it is disadvantageous in thatit is difficult to obtain a large displacement-generating force when aminute element is used.

[0007] In the case of the piezoelectric/electrostrictive film-typeelement, when it is required to maintain a state of displacement in onedirection for a certain period of time, it is necessary to continuouslyapply the voltage to the piezoelectric/electrostrictive film operatingsection.

[0008] For this reason, for example, when thepiezoelectric/electrostrictive film-type element is applied to a displaydevice as disclosed by the present inventors in Japanese Laid-OpenPatent Publication No. 7-287176, it is necessary to continuously applythe voltage to the piezoelectric/electrostrictive film operating sectionthroughout the period in which the light emission state should bemaintained.

[0009] In this case, for example, when a display device, which comprisesa large number of light-emitting elements disposed two-dimensionally, isproduced, it is necessary to arrange electric wiring for driving each ofthe elements one by one. Such an arrangement involves large restrictionin view of design and production.

[0010] The present invention has been made considering the problems asdescribed above, an object of which is to provide a ceramic elementwhich makes it possible to precisely control the magnitude ofdisplacement amount with respect to an applied voltage, and obtain alarge displacement-generating force exceeding those obtained by thepiezoelectric/electrostrictive film-type element even when a minuteelement is used.

[0011] Another object of the present invention is to provide a ceramicelement which makes it possible to maintain a displacement amountapproximately equivalent to that obtained when a driving voltage isapplied, in the no voltage-loaded state or in a low voltage-loaded stateafter completion of application of the driving voltage, in addition tothe condition described above.

[0012] Still another object of the present invention is to provide aceramic element which makes it possible to simplify electric wiring fordriving the element and effectively reduce the production cost when avariety of applications (for example, display devices and filters) areconstructed, in addition to the condition described above.

[0013] Still another object of the present invention is to provide adisplay device which consumes less electric power and which makes itpossible to simplify electric wiring for driving the display device andeffectively reduce the production cost and the running cost.

[0014] Still another object of the present invention is to provide arelay device which consumes less electric power and which makes itpossible to simplify electric wiring for driving the relay device,effectively reduce the production cost and the running cost, and realizevarious types of switching operations.

[0015] Still another object of the present invention is to provide acapacitor which makes it possible to easily construct a thin-typecapacitance-variable capacitor with its capacitance changeable in ananalog manner, and facilitate miniaturization of, for example,parametric amplifiers incorporated with the variable capacitor,automatic frequency control circuits (AFC), and various types ofcommunication instruments.

DISCLOSURE OF THE INVENTION

[0016] According to the present invention, there is provided a ceramicelement comprising an operating section having an anti-ferroelectricfilm and at least a pair of electrodes formed on the anti-ferroelectricfilm, a vibrating section for supporting the operating section, and afixed section for supporting the vibrating section in a vibratingmanner.

[0017] The principle of operation of the anti-ferroelectric film willnow be explained. When the ferroelectric phase is induced in theanti-ferroelectric film in accordance with the change in, for example,the temperature, the stress, and the electric field, then the strainx_(F) is given by the following expression:

x _(F) =Q(1+Ω)P _(F) ²

[0018] wherein P_(F) represents the ferroelectric polarization, and itsatisfies P_(F)=(Pa+Pb)/2, and wherein Pa and Pb represent thesub-lattice polarization.

[0019] In the case of the perovskite type crystal, the electrostrictiveconstant Qh (=Q₁₁+2Q₁₂) has a positive value. Therefore, the spontaneousvolume strain of an ordinary ferroelectric is always positive, while inthe case of the anti-ferroelectric, its spontaneous strain x_(A) may bepositive or negative depending on the value of Ω. In the case of leadzirconate (PbZrO₃), there is given Ω=1.8.

[0020] It is assumed that the absolute values |Pa|, |Pb| of thesub-lattice polarization are not changed so much before and after theanti-ferroelectric phase-ferroelectric phase transition. On thisassumption, the amount of strain change Δx involved in the transition isrepresented as follows:

Δx=x _(F) −x _(A)=2QΩP _(F) ²

[0021] Further, it is known that large displacement is obtained when theanti-ferroelectric phase-ferroelectric phase transition is utilized,rather than when the paraelectric phase-anti-ferroelectric phasetransition is used.

[0022] It is known, for example, that a ceramic (polycrystal) derivedfrom lead zirconate titanate (PZT) successively causes transition to thepseudo-tetragonal anti-ferroelectric phase and the orthorhombicferroelectric phase in accordance with the decrease in temperature fromthe cubic paraelectric phase which is the phase at a high temperature.Therefore, when a composition, in which the anti-ferroelectric phase isstable at room temperature, is selected, it is possible to easily inducethe ferroelectric phase by applying an external electric field. It isexpected that a large change in strain takes place in accordancetherewith.

[0023] Once the ferroelectric phase is induced, it is not returned tothe anti-ferroelectric phase even when the electric field is made to bezero, exhibiting the “effect to store the strain state of theferroelectric phase (shape memory effect)”. In order to make restorationto the original anti-ferroelectric state, a small reverse bias voltagemay be applied, or temperature-programmed annealing may be performed.

[0024] That is, the anti-ferroelectric causes the electric field-inducedphase transition by applying the external magnetic field. Therefore, thephase transition occurs from the anti-ferroelectric phase to theferroelectric phase to cause the volume change by applying, to the pairof electrodes, a voltage not less than a predetermined voltage. Thus, itis possible to easily obtain the mechanical displacement.

[0025] Since the displacement amount is brought about by the phasetransition, it is impossible, unlike the piezoelectric/electrostrictiveelement, to accurately control the magnitude of the displacement amountby selecting the value of the voltage to be applied. However, on thecontrary, the ceramic element exhibits a characteristic that thedisplacement can be continuously maintained even when the appliedvoltage is lowered provided that the applied voltage is not lowered upto a predetermined voltage at which the phase transition occurs from theferroelectric phase to the original anti-ferroelectric phase.

[0026] Based on this knowledge, when the ceramic element according tothe present invention is considered, the ceramic element has thestructure in which the operating section having the anti-ferroelectricfilm is formed on the vibrating section which is vibratingly supportedby the fixed section. Accordingly, when the predetermined voltage isapplied to the pair of electrodes, the anti-ferroelectric film of theoperating section undergoes the electric field-induced phase transitioncaused by the external electric field brought about by the predeterminedvoltage. The mechanical displacement is generated in accordance with thephase transition. The displacement is amplified by the vibratingsection, and the operating section is displaced in a first direction(for example, in a direction for the operating section to face the freespace).

[0027] Once the operating section is displaced in the first direction,the displacement is maintained as it is even when the voltageapplication to the pair of electrodes is stopped (for example, when theelectric field is made to be zero). Accordingly, it is unnecessary tocontinuously apply the voltage to the pair of electrodes even when thedisplacement generated in the operating section is required to bemaintained for a certain period of time. In order to restore thedisplacement generated in the operating section to the original state, asmall reverse bias voltage, specifically a voltage to cause the phasetransition from the ferroelectric phase to the anti-ferroelectric phasemay be applied to the pair of electrodes.

[0028] As described above, in the ceramic element according to thepresent invention, the amount of mechanical displacement is changed in adigital manner depending on the voltage applied to the pair ofelectrodes. Further, the displacement amount, which is equivalent tothat obtained upon the voltage application, can be maintained in the novoltage-loaded state after completion of application of the voltage.

[0029] It is preferable for the ceramic element constructed as describedabove that the pair of electrodes have a form in which an intensity ofan electric field, which is generated by applying a voltage to the pairof electrodes, spatially differs. Accordingly, the following phenomenonoccurs. That is, for example, a part of the region of the operatingsection is displaced by applying a low voltage, and the other region isnot displaced. After that, for example, a high voltage is applied to thepair of electrodes, then the other region also undergoes displacement,and the entire operating section makes displacement.

[0030] In other words, the operating section successively makesdisplacement in a digital manner, starting from the portion to which arelatively high electric field is consecutively applied in accordancewith the increase in the applied voltage.

[0031] As described above, in the ceramic element according to thepresent invention, a plurality of displacement forms and/or displacementdistributions can be selected depending on the value of the voltageapplied to the pair of electrodes. Thus, it is possible to realizesemi-analog or quasi-analog mechanical displacement.

[0032] Specifically, in order to obtain the element which is excellentin selectivity, for example, for the displacement form, the ceramicelement may have a region in which a distance between the pair ofelectrodes is large and a region in which the distance between the pairof electrodes is small. The region in which the distance between theelectrodes is large and the region in which the distance between theelectrodes is small are formed by using a pattern of the pair ofelectrodes. Accordingly, when a constant voltage is applied to the pairof electrodes, a high electric field is always generated in thesmall-distance region than in the large-distance region. Therefore, whenthe applied voltage is low, only the portion of the anti-ferroelectricfilm corresponding to the small-distance region is subjected to thephase transition at a certain voltage to cause displacement.Subsequently, when a larger voltage is applied to the pair ofelectrodes, the large-distance region is subjected to the phasetransition at a certain voltage to cause displacement. As a result, thefollowing effect can be obtained. That is, two displacement forms ordisplacement distributions can be arbitrarily selected by selecting anyone of the two applied voltage levels.

[0033] Of course, it is possible to realize those based on three or morevoltage levels to be applied to the pair of electrodes and three or moredisplacement forms or displacement distributions.

[0034] It is preferable for the ceramic element constructed as describedabove that the anti-ferroelectric film after polarization has a regionin which its average dielectric constant is increased in an analogmanner in accordance with a voltage applied to the electrodes. In thisembodiment, when the voltage is applied to the electrodes, the electricfield-induced phase transition is caused over a region corresponding tothe applied voltage in the anti-ferroelectric film of the operatingsection. The term “applied voltage” refers to an absolute value of thepositive or negative voltage.

[0035] The operation of the ceramic element according to the presentinvention will be specifically explained. At first, until the appliedvoltage arrives at a predetermined voltage in accordance with thegradual increase in applied voltage, the electric field generated in theoperating section is weak. Therefore, the electric field-induced phasetransition (hereinafter simply referred to as “phase transition”) is notcaused in the anti-ferroelectric film.

[0036] When the applied voltage exceeds the predetermined voltage, asufficient electric field intensity is provided to cause the phasetransition in a region in which the distance between the electrodes isshortest and in a region which is nearest to the electrodes. The phasetransition occurs in these regions, and the mechanical displacement isgenerated in accordance with the phase transition. The displacement isamplified by the vibrating section, and the operating section isdisplaced in the first direction (for example, in the direction for theoperating section to face the free space).

[0037] When the applied voltage is further increased, the region, whichhas the sufficient electric field intensity to cause the phasetransition, is gradually widened. The phase transition also occurs in aregion in which the distance between the electrodes is long and in aregion which is far from the electrodes in this stage, the mechanicaldisplacement of the operating section is increased in accordance withthe spread of the phase transition area.

[0038] That is, in the ceramic element according to the presentinvention, the displacement in the first direction generated in theoperating section is increased in an analog manner in accordance withthe increase in applied voltage.

[0039] Once the operating section is displaced in the first direction,the displacement is maintained as it is even when the voltageapplication to the pair of electrodes is stopped (for example, when theelectric field is made to be zero). Accordingly, it is unnecessary tocontinuously apply the voltage to the pair of electrodes even when thedisplacement generated in the operating section is required to bemaintained for a certain period of time. In order to restore thedisplacement generated in the operating section to the original state, asmall reverse bias voltage, specifically a voltage to cause the phasetransition from the ferroelectric phase to the anti-ferroelectric phasemay be applied to the pair of electrodes.

[0040] As described above, in the ceramic element according to thepresent invention, the mechanical displacement amount is changed in theanalog manner depending on the voltage applied to the electrodes. Thedisplacement amount, which is equivalent to that obtained upon thevoltage application, can be maintained in the no voltage-loaded stateafter completion of the application of the voltage to the electrodes.

[0041] Accordingly, it is possible to precisely control the magnitude ofthe displacement amount corresponding to the applied voltage. Moreover,it is possible to obtain a large displacement-generating force whichexceeds those obtained in the piezoelectric/electrostrictive film-typeelement, even when a minute element is used.

[0042] In the ceramic element according to the present invention, thedisplacement amount, which is approximately the same as that obtainedupon application of the driving voltage, can be maintained in the novoltage-loaded state and the low voltage-loaded state after completionof the application of the driving voltage. When the ceramic element isapplied to a variety of applications (for example, display devices andfilters), it is possible to simplify electric wiring for driving theelement and effectively reduce the production cost.

[0043] In the ceramic element as described above, it is also preferableto combine a plurality of regions in which the average dielectricconstant is increased in an analog manner depending on the appliedvoltage. In this embodiment, a plurality of areas exist depending on theapplied voltage, in which the displacement ratio (displacement increaserate) differs. A plurality of displacement forms and/or displacementdistributions can be selected depending on the value of the appliedvoltage. Thus, it is possible to obtain the element which is excellentin, for example, selectivity for the displacement form.

[0044] Specifically, for example, when it is intended to obtain theelement excellent in selectivity for the displacement form, it ispreferable to provide a region in which a distance between the pair ofelectrodes is large and a region in which the distance between the pairof electrodes is small. The region in which the distance between theelectrodes is large and the region in which the distance between theelectrodes is small are formed by using a pattern of the pair ofelectrodes. Accordingly, when a constant voltage is applied to the pairof electrodes, a high electric field is always generated in thesmall-distance region than in the large-distance region. Therefore, whenthe applied voltage is low, only the portion of the anti-ferroelectricfilm corresponding to the small-distance region is subjected to thephase transition at a certain voltage to cause displacement.Subsequently, when a larger voltage is applied to the pair ofelectrodes, the large-distance region is subjected to the phasetransition at a certain voltage to cause displacement. As a result, thefollowing effect can be obtained. That is, two displacement forms ordisplacement distributions can be arbitrarily selected by selecting anyone of the two applied voltage levels.

[0045] Of course, it is possible to realize those based on three or morevoltage levels to be applied to the pair of electrodes and three or moredisplacement forms or displacement distributions.

[0046] It is preferable for the ceramic element constructed as describedabove that the vibrating section and the fixed section are provided on asubstrate formed by stacking ceramic green sheets or ceramic greentapes, followed by integrated sintering.

[0047] In this embodiment, it is preferable that at least the vibratingsection is principally formed of partially stabilized zirconia.Accordingly, it is possible to obtain the vibrating section having highstrength and high toughness, making it possible to obtain a long servicelife of the ceramic element.

[0048] It is preferable for the ceramic element constructed as describedabove that the anti-ferroelectric film principally has the followingcomposition:

Pb_(0.99)Nb_(0.02){[Zr_(x)Sn_(1-x)]_(1-y)Ti_(y)}_(0.98)O₃

[0049] wherein 0.5<x<0.6, 0.05<y<0.063, 0.01<Nb<0.03.

[0050] In this embodiment, the large displacement is obtained ascompared with the paraelectric phase-anti-ferroelectric phasetransition, because the anti-ferroelectric phase-ferroelectric phasetransition is utilized. Especially, when the composition described aboveis used, the anti-ferroelectric phase is stable at room temperature.Therefore, it is possible to easily induce the anti-ferroelectric phaseby applying an external electric field, in accordance with which it ispossible to cause large strain change.

[0051] It is especially preferable that the composition contains Ag inan amount of 1 to 10% by weight as converted into an amount of silveroxide, as a material for the anti-ferroelectric film, in order to obtainmore precise and larger displacement, and in order to obtain more stableshape memory characteristics.

[0052] In the embodiment described above, Ag may be contained by meansof the following methods. That is, Ag may be added in a form of oxidetogether with other material powders during the process to prepare theanti-ferroelectric film. Alternatively, Ag may be added to a previouslyprepared anti-ferroelectric material powder, as silver oxide or as anaqueous solution of silver nitrate. Further alternatively, Ag may bemixed in a form of silver oxide powder or in a form of organic metalcompound of Ag when a printing paste is prepared.

[0053] In a preferred embodiment, the substrate may be formed bystacking a spacer plate provided with a window and a closing plate to besuperimposed on one side of the spacer plate so that the window iscovered therewith, followed by integrated sintering. In this embodiment,the operating section can be formed in a minute region on the vibratingsection, making it possible to realize high density integration for theoperating section.

[0054] In another preferred embodiment, the substrate may be formed bystacking at least one layer of a base plate to be superimposed on theother side of the spacer plate so that the window Is covered therewith,the base plate having one or more through-holes at a positioncorresponding to the window, followed by integrated sintering togetherwith the spacer plate and the closing plate. In this embodiment, astacked compact, which is composed of the spacer plate, the closingplate, and the base plate, is integrally sintered to form the vibratingsection and the fixed section. However, in general, it is feared thatthe sintered compact itself may be destroyed due to the increase inpressure at the window, if the integrated sintering is performed whileclosing both openings of the window. However, in the present invention,one or more through-holes are provided through the base plate.Therefore, the pressure in the window generated during the integratedsintering is released to the outside through the through-hole.Accordingly, the destruction of the stacked compact is avoided, whichwould be otherwise caused during the integrated sintering. This featureis advantageous to improve the reliability of the vibrating section andthe fixed section.

[0055] The pair of electrodes are formed on at least a part of theanti-ferroelectric film in accordance with the following embodiments.That is, both of the pair of electrodes may be formed on a firstprincipal surface of the anti-ferroelectric film. Alternatively, one ofthe pair of electrodes may be formed on a first principal surface of theanti-ferroelectric film, and the other electrode may be formed on asecond principal surface of the anti-ferroelectric film.

[0056] Especially, when the pair of electrodes are formed on the firstprincipal surface of the anti-ferroelectric film, it is preferable tosatisfy p/t≦2.5 provided that an average film thickness of theanti-ferroelectric film is t, and a pitch between the electrodes is p.It is preferable that the vibrating section principally comprisespartially stabilized zirconia containing not less than 0.5 mole % ofalumina. In this embodiment, the anti-ferroelectric film is directlyformed on the vibrating section. Therefore, the anti-ferroelectric filmis tightly joined to the vibrating section. Thus, it is possible toobtain the ceramic element having a large displacement amount.

[0057] When one of the electrodes is formed on the first principalsurface of the anti-ferroelectric film, and the other electrode isformed on the second principal surface of the anti-ferroelectric film,it is preferable to satisfy A/B≧2 or A/B≦0.5 provided that an area ofthe one electrode is A, and an area of the other electrode is B.Alternatively, it is preferable that a region interposed between theelectrodes has a film thickness distribution which involves dispersionof not less than 20%.

[0058] Especially, when the electrodes have the form as described above,it is preferable that the vibrating section is principally composed ofpartially stabilized zirconia containing not less than 0.5 mole % oftitanium oxide. In this embodiment, the anti-ferroelectric film istightly joined to the vibrating section by the aid of the otherelectrode. Therefore, the reliability is improved. Further, theanti-ferroelectric film is not secured to the vibrating section in theregion in which the electrode does not exist on the surface to which theanti-ferroelectric film and the vibrating section are opposed.Accordingly, it is possible to obtain the ceramic element having a largedisplacement amount without restricting the vibrating displacement ofthe operating section.

[0059] When the pair of electrodes are formed on the first principalsurface of the anti-ferroelectric film, an intermediate layer may beprovided between the vibrating section and the anti-ferroelectric film.In this embodiment, the intermediate layer is preferably a metal of Ptor Pd or an alloy of the both metals. It is appropriate that a thicknessof the intermediate layer is not less than 1 μm and not more than 10 μm.It is preferable that the thickness of the intermediate layer is notless than 2 μm and not more than 6 μm.

[0060] It is preferable for the ceramic element constructed as describedabove that a thickness of the vibrating section is thinner than athickness of the anti-ferroelectric film. In this embodiment, it isappropriate that a thickness tb of the substrate satisfies tb<350 μmwhen Ln<tv×15 is satisfied provided that a boundary portion between anupper surface of the fixed section and an upper surface of the vibratingsection concerning a shortest dimension passing through a center of thevibrating section is defined as a boundary point, a distance from theboundary point to an end of a region in which the anti-ferroelectricfilm is formed is Ln, and a thickness of the vibrating section is tv.Preferably, tb<250 μm is satisfied. More preferably, tb<130 μm issatisfied. Most preferably, tb≦70 μm is satisfied.

[0061] When the distance Ln from the boundary point to the end of theregion in which the anti-ferroelectric film is formed satisfiesLn≧tv×15, the thickness tv of the vibrating section is preferably 1 to50 μm, and more preferably 3 to 20 μm. On the other hand, an averagethickness of the anti-ferroelectric film 22 is preferably 1 to 100 μm,more preferably 3 to 50 μm, and most preferably 5 to 40 μm.

[0062] It is desirable that the anti-ferroelectric film formed on thesubstrate is obtained by performing a sintering treatment while applyinga load. In this embodiment, it is preferable that the load is not lessthan 0.4 kg/cm². Further, it is preferable that a depth of a spacedisposed just under the vibrating section is not more than 10 μm.

[0063] According to another aspect of the present invention, there isprovided a method for producing a ceramic element comprising anoperating section having an anti-ferroelectric film and at least a pairof electrodes formed on the anti-ferroelectric film, a vibrating sectionfor supporting the operating section, and a fixed section for supportingthe vibrating section in a vibrating manner; the method comprising thesteps of stacking ceramic green sheets or ceramic green tapes followedby integrated sintering to prepare a substrate having the vibratingsection and the fixed section; forming the anti-ferroelectric film onthe vibrating section of the substrate; and sintering theanti-ferroelectric film.

[0064] In this aspect, it is preferable that the anti-ferroelectric filmis subjected to a sintering treatment while applying a load thereto.More desirably, the load is not less than 0.4 kg/cm².

[0065] In the production method described above, it is preferable thatan anti-ferroelectric ceramic material is prepared to have a powdercomposition which is deviated from an optimum composition when a powderof the anti-ferroelectric ceramic material is prepared to produce theanti-ferroelectric film, while speculating variation in composition dueto mutual diffusion with respect to the vibrating section during thesintering for the anti-ferroelectric film. In this embodiment, thematerial is prepared such that ZrO₂ is weighed in an amount smaller thanits prescribed amount, and TiO₂ is weighed in an amount larger than itsprescribed amount. Specifically, it is preferable that the amount ofZrO₂ is 95 to 98% provided that the prescribed amount is 100%, and/orthe amount of TiO₂ is 102 to 104% provided that the prescribed amount is100%.

[0066] It is preferable that when a powder of an anti-ferroelectricceramic material is prepared to produce the anti-ferroelectric film, thepowder is previously prepared in a composition in which lead oxide iscontained in an amount smaller than its prescribed blending amount, andthen an amount of shortage of lead component is compensated and mixedafterward in a form of lead oxide.

[0067] In this embodiment, an amount of post-compensation for the leadcomponent is preferably not less than 3% and not more than 20% of theprescribed blending amount, and more preferably not less than 5% and notmore than 15% thereof.

[0068] It is preferable that when a powder of anti-ferroelectric ceramicmaterial is prepared to produce the anti-ferroelectric film, a specificsurface area of tin oxide to be used as a raw material is not less than8 m²/g and not more than 20 m²/g.

[0069] In the production method described above, it is preferable thatthe substrate is formed by stacking a second layer provided with awindow, a third layer to be superimposed on one side of the second layerso that the window is covered therewith, and a first layer to besuperimposed on the other side of the second layer so that the window iscovered therewith, the first layer having one or more through-holes at aposition corresponding to the window, followed by integrated sinteringto produce the substrate made of ceramic.

[0070] In another embodiment of the production method, it is preferablethat a paste composed of a ceramic material is formed as a pattern on anupper surface of a first layer having one or more through-holes, asecond layer having a window is formed at a portion corresponding to thethrough-hole, and then a third layer is stacked to close the window,followed by integrated sintering to produce the substrate made ofceramic.

[0071] When the substrate is produced, it is preferable that a thicknessof the second layer is 1 to 15 μm.

[0072] According to still another aspect of the present invention, thereis provided a display device comprising an optical waveguide plate forintroducing light thereinto, and a driving unit provided opposingly toone plate surface of the optical waveguide plate and including a numberof actuator elements arranged corresponding to a large number of pictureelements, for displaying, on the optical waveguide plate, a pictureimage corresponding to an image signal by controlling leakage light at apredetermined portion of the optical waveguide plate by controllingdisplacement action of each of the actuator elements in a direction tomake contact or separation with respect to the optical waveguide platein accordance with an attribute of the image signal to be inputted;wherein the actuator element comprises a main actuator element having ananti-ferroelectric film and at least a pair of electrodes formed on theanti-ferroelectric film, a vibrating section for supporting the mainactuator element, and a fixed section for vibratingly supporting thevibrating section, the display device further comprising adisplacement-transmitting section for transmitting, to the opticalwaveguide plate, the displacement action of the actuator elementgenerated by applying a voltage to the pair of electrodes.

[0073] Accordingly, at first, all of the light, which is introduced, forexample, from the end of the optical waveguide plate, is totallyreflected at the inside of the optical waveguide plate without beingtransmitted through the front and back surfaces of the optical waveguideplate, by regulating the magnitude of the refractive index of theoptical waveguide plate. In this state, for example, when thedisplacement-transmitting section contacts with the back surface of theoptical waveguide plate at a distance of not more than the wavelength ofthe light, then the light, which has been totally reflected, istransmitted to the surface of the displacement-transmitting sectioncontacting with the back surface of the optical waveguide plate. Thelight, which has once reached the surface of thedisplacement-transmitting section, is reflected by the surface of thedisplacement-transmitting section, and the light behaves as scatteredlight. A part of the scattered light is reflected again at the inside ofthe optical waveguide plate. However, almost all of the scattered lightis not reflected by the optical waveguide plate, and the light istransmitted through the front surface of the optical waveguide plate.

[0074] As described above, it is possible to control the presence orabsence of light emission (leakage light) at the front surface of theoptical waveguide plate, depending on the presence or absence of thecontact of the displacement-transmitting section disposed at the back ofthe optical waveguide plate. In this case, one unit for allowing thedisplacement-transmitting plate to make the displacement action in thedirection to give contact or separation with respect to the opticalwaveguide plate may be regarded as one picture element. Thus, a pictureimage (for example, characters and graphics) corresponding to an imagesignal can be displayed on the front surface of the optical waveguideplate in the same manner as the cathode ray tube and the liquid crystaldisplay device, by arranging a large number of such picture elements ina matrix form, and controlling the displacement action of each of thepicture elements in accordance with an attribute of the inputted imagesignal.

[0075] According to still another aspect of the present invention, thereis provided a relay device comprising an opposing terminal section, anda driving unit provided opposingly to one side of the opposing terminalsection and including a number of actuator elements arrangedcorresponding to a large number of switching elements, for switching andcontrolling ON/OFF operation of the switching element by controllingdisplacement action of each of the actuator elements in a direction tomake contact or separation with respect to the opposing terminal inaccordance with an attribute of a driving signal to be inputted; whereinthe actuator element comprises a main actuator element having ananti-ferroelectric film and at least a pair of electrodes formed on theanti-ferroelectric film, a vibrating section for supporting the mainactuator element, and a fixed section for vibratingly supporting thevibrating section, the relay device further comprising a signal terminalsection for transmitting, to the opposing terminal section, thedisplacement action of the actuator element generated by applying avoltage to the pair of electrodes.

[0076] Accordingly, the signal terminal section of one of the largenumber of switching elements contacts with the opposing terminalsection, the signal terminal section is electrically connected to theopposing terminal section. A signal is transmitted between the signalterminal section and the opposing terminal section. Thus, for example,the ON operation is performed.

[0077] As described above, it is possible to control the ON/OFFoperation of the large number of switching elements depending on thepresence or absence of the contact of the signal terminal sectiondisposed at the back of the opposing terminal section. In this case, oneunit for allowing the signal terminal section to make the displacementaction in the direction to give contact or separation with respect tothe opposing terminal section may be regarded as one switching element.Thus, a large number of combinations of switching forms can be provided,for example, by arranging a large number of such switching elements in amatrix form, and controlling the displacement action of each of theswitching elements in accordance with an attribute of the inputtedswitching signal.

[0078] The relay device according to the present invention includes themain actuator element for making selective displacement of the signalterminal section, the main actuator element comprising theanti-ferroelectric film, and at least one pair of electrodes formed onthe anti-ferroelectric film. In this arrangement, when a predeterminedvoltage is applied to the pair of electrodes, an electric field isgenerated in the main actuator element depending on the applied voltage.The generated electric field allows the anti-ferroelectric film to makedisplacement, for example, in the first direction. The displacement ofthe anti-ferroelectric film in the first direction causes the signalterminal section to displace toward the opposing terminal section. Thus,the N operation of the switching element is induced as described above.

[0079] Especially, as described above, once the anti-ferroelectric filmundergoes the displacement, the displacement is maintained even when theno voltage-loaded state is given. Therefore, after the voltage isapplied to the necessary switching element for performing the switchingoperation to displace the main actuator element of the necessaryswitching element, the displacement is maintained to continue the ONoperation of the necessary switching element over a period until thedisplacement is counteracted, even when the voltage application to thepair of electrodes concerning the necessary switching element isstopped. Accordingly, electric power consumption is greatly reduced, andit is possible to realize reduction of running cost.

[0080] When the switching control is performed by specifying rows andcolumns, it is enough to apply the voltage to only a switching elementcolumn corresponding to a concerning row. It is unnecessary to considervoltage application to the other switching element columns. Therefore,when electric wiring is arranged for driving the element, it isunnecessary to arrange wiring for each of elements one by one in anindividual manner. Thus, it is possible to simplify the electric wiring.This results in the reduction of load exerted on the system forsupplying the driving voltage. Accordingly, it is possible to simplifythe mechanical structure and the circuit arrangement and reduce theproduction cost.

[0081] According to still another aspect of the present invention, thereis provided a capacitor comprising a vibrating section for supporting acapacitor unit, and a fixed section for vibratingly supporting thevibrating section, wherein the capacitor unit comprises ananti-ferroelectric film formed on the vibrating section, a pair ofcontrol electrodes formed on an upper surface of the anti-ferroelectricfilm, and both terminal electrodes of the capacitor formed on the uppersurface and a lower surface of the anti-ferroelectric film respectively.

[0082] Accordingly, it is possible to easily construct acapacitance-variable capacitor in which the capacitance appearingbetween the both terminal electrodes is changed in an analog manner inaccordance with the increase in voltage applied to the pair of controlelectrodes. Further, the capacitor can be formed as one of the thinfilm-type. Therefore, it is possible to facilitate miniaturization of,for example, parametric amplifiers incorporated with the variablecapacitor, automatic frequency control circuits (AFC), and various typesof communication instruments.

BRIEF DESCRIPTION OF THE DRAWINGS

[0083]FIG. 1 shows a sectional view illustrating a structure of aceramic element according to a first embodiment.

[0084]FIG. 2 shows a plan view illustrating a planar configuration of avibrating section, a planar configuration of an anti-ferroelectric, andan outer circumferential configuration formed by a pair of electrodesfor constructing a main actuator element of the ceramic elementaccording to the first embodiment.

[0085]FIG. 3 shows a plan view illustrating a planar configuration(spiral configuration) of the pair of electrodes formed on theanti-ferroelectric film of the ceramic element according to the firstembodiment.

[0086]FIG. 4 shows a plan view illustrating a planar configuration(branched configuration) of the pair of electrodes formed on theanti-ferroelectric film of the ceramic element according to the firstembodiment.

[0087]FIG. 5A shows a plan view illustrating a structure in which a pairof comb-shaped electrodes are formed on the anti-ferroelectric film ofthe ceramic element according to the first embodiment.

[0088]FIG. 5B shows a sectional view taken along a line A-A shown inFIG. 5A.

[0089]FIG. 5C shows a sectional view taken along a line B-B shown inFIG. 5A.

[0090]FIG. 6A illustrates a state in which a voltage V=0 is applied tothe pair of electrodes of the actuator element of the ceramic element(analog displacement type) according to the first embodiment.

[0091]FIG. 6B illustrates a state in which a voltage V=V1 is applied tothe pair of electrodes of the actuator element.

[0092]FIG. 6C illustrates a state in which a voltage V=V2 is applied tothe pair of electrodes of the actuator element.

[0093]FIG. 6D illustrates a state in which a voltage V=V3 is applied tothe pair of electrodes of the actuator element.

[0094]FIG. 7 shows a characteristic curve illustrating an example of thebending displacement characteristic of the analog displacement type ofthe ceramic element according to the first embodiment.

[0095]FIG. 8A illustrates a state in which a voltage V=0 is applied tothe pair of electrodes of the actuator element of the ceramic element(digital displacement type) according to the first embodiment.

[0096]FIG. 8B illustrates a state in which a voltage V=V1 is applied tothe pair of electrodes of the actuator element.

[0097]FIG. 8C illustrates a state in which a voltage V=V2 is applied tothe pair of electrodes of the actuator element.

[0098]FIG. 8D illustrates a state in which a voltage V=V3 is applied tothe pair of electrodes of the actuator element.

[0099]FIG. 9A illustrates an initial state of the actuator element ofthe ceramic element (analog displacement type and digital displacementtype) according to the first embodiment.

[0100]FIG. 9B illustrates a state in which a voltage is applied to thepair of electrodes of the actuator element to displace the actuatorelement.

[0101]FIG. 9C illustrates a state in which the voltage application tothe pair of electrodes of the actuator element is stopped (novoltage-loaded state).

[0102]FIG. 10A illustrates an initial state of an actuator element of acomparative piezoelectric/electrostrictive film-type element.

[0103]FIG. 10B illustrates a state in which a voltage is applied to apair of electrodes of the actuator element to displace the actuatorelement.

[0104]FIG. 10C illustrates a state in which the voltage application tothe pair of electrodes of the actuator element is stopped (novoltage-loaded state).

[0105]FIG. 11A illustrates the directions of expansion of theanti-ferroelectric film and the piezoelectric/electrostrictive film whenthe pair of electrodes have the spiral planar configuration.

[0106]FIG. 11B shows a magnified view illustrating the direction ofexpansion of the anti-ferroelectric film concerning a portion enclosedby a rectangle shown in FIG. 11A.

[0107]FIG. 11C shows a magnified view illustrating the direction ofexpansion of the piezoelectric/electrostrictive film concerning aportion enclosed by the rectangle shown in FIG. 11A.

[0108]FIG. 12A shows a sectional view illustrating, with partialomission, a cross-sectional configuration of the actuator elementrelative to a shortest dimension.

[0109]FIG. 12B shows a sectional view illustrating, with partialomission, a case in which one outermost local minimum point and theother outermost local minimum point exist below the upper surface of thefixed section.

[0110]FIG. 12C shows a sectional view illustrating, with partialomission, a case in which one outermost local minimum point and theother outermost local minimum point exist above the upper surface of thefixed section.

[0111]FIG. 13 shows a sectional view illustrating, with partialomission, an example of a case in which the other outermost localminimum point does not exist in the other local minimum point-existingregion in the cross-sectional configuration relative to the shortestdimension of the actuator element, and the other boundary point isregarded as the other outermost local minimum point.

[0112]FIG. 14A shows a plan view illustrating a modified embodiment ofthe ceramic element according to the first embodiment.

[0113]FIG. 14B shows a sectional view taken along a line C-C shown inFIG. 14A.

[0114]FIG. 15A illustrates a form of displacement in a state in which avoltage in a low voltage range (voltage level V1 to V2) is applied tothe pair of electrodes of the ceramic element according to the modifiedembodiment.

[0115]FIG. 15B illustrates a form of displacement in a state in which avoltage in a high voltage range (voltage level V2 to V3) is applied tothe pair of electrodes of the ceramic element according to the modifiedembodiment.

[0116]FIG. 16 shows a sectional view illustrating a structure of aceramic element according to a second embodiment.

[0117]FIG. 17A illustrates a state in which a voltage V=0 is applied tothe pair of electrodes of the actuator element of the ceramic element(analog displacement type) according to the second embodiment.

[0118]FIG. 17B illustrates a state in which a voltage V=V1 is applied tothe pair of electrodes of the actuator element.

[0119]FIG. 17C illustrates a state in which a voltage V=V2 is applied tothe pair of electrodes of the actuator element.

[0120]FIG. 17D illustrates a state in which a voltage V=V3 is applied tothe pair of electrodes of the actuator element.

[0121]FIG. 18A shows a plan view illustrating an example of the planarconfiguration (spiral configuration) of the upper electrode of theceramic element (first analog displacement type) according to the secondembodiment.

[0122]FIG. 18B shows a plan view illustrating another example (zigzagconfiguration).

[0123]FIG. 19A illustrates a state in which a voltage V=0 is applied tothe pair of electrodes of the actuator element of the ceramic element(second analog displacement type) according to the second embodiment.

[0124]FIG. 19B illustrates a state in which a voltage V=V1 is applied tothe pair of electrodes of the actuator element.

[0125]FIG. 19C illustrates a state in which a voltage V=V2 is applied tothe pair of electrodes of the actuator element.

[0126]FIG. 19D illustrates a state in which a voltage V=V3 is applied tothe pair of electrodes of the actuator element.

[0127]FIG. 20A illustrates a state in which a voltage V=0 is applied tothe pair of electrodes of the actuator element of the ceramic element(digital displacement type) according to the second embodiment.

[0128]FIG. 20B illustrates a state in which a voltage V=V1 is applied tothe pair of electrodes of the actuator element.

[0129]FIG. 20C illustrates a state in which a voltage V=V2 is applied tothe pair of electrodes of the actuator element.

[0130]FIG. 20D illustrates a state in which a voltage V=V3 is applied tothe pair of electrodes of the actuator element.

[0131]FIG. 21 shows a characteristic curve illustrating an example ofthe bending displacement characteristic of the digital displacement typeof the ceramic element according to the second embodiment.

[0132]FIG. 22 shows a sectional view illustrating a modified embodimentof the ceramic element according to the second embodiment.

[0133]FIG. 23A illustrates a form of displacement in a state in which avoltage in a low voltage range (voltage level V1 to V2) is applied tothe pair of electrodes of the ceramic element according to the modifiedembodiment.

[0134]FIG. 23B illustrates a form of displacement in a state in which avoltage in a high voltage range (voltage level V2 to V3) is applied tothe pair of electrodes of the ceramic element according to the modifiedembodiment.

[0135]FIG. 24 shows a sectional view illustrating a structure of aceramic element according to a third embodiment.

[0136]FIG. 25 shows a perspective view illustrating a bulk-type element.

[0137]FIG. 26 shows a table depicting results obtained in a firstillustrative experiment (illustrative experiment to observe the changein displacement-retaining ratio depending on the thickness of theintermediate layer).

[0138]FIG. 27 shows a table depicting results obtained in a secondillustrative experiment (illustrative experiment to observe the changein displacement-retaining ratio depending on the thickness of thesubstrate).

[0139]FIG. 28 illustrates the dimensional relation between the substrateand the vibrating section.

[0140]FIG. 29 illustrates the hot press method.

[0141]FIG. 30A schematically illustrates a first specified technique ofthe hot press method.

[0142]FIG. 30B schematically illustrates a second specified technique ofthe hot press method.

[0143]FIG. 31 shows a table depicting results obtained in a thirdillustrative experiment (illustrative experiment to observe the changein degree of denseness of the anti-ferroelectric film depending on thehot press load).

[0144]FIG. 32 shows a block diagram illustrating steps of an ordinarymethod used when a powder of an anti-ferroelectric ceramic material isprepared.

[0145]FIG. 33 shows a block diagram illustrating steps of a method forpreparing a powder of an anti-ferroelectric ceramic material to be usedwhen speculative compensation is carried out.

[0146]FIG. 34 shows a table depicting results obtained in a fourthillustrative experiment (illustrative experiment to observe the changein displacement-retaining ratio depending on the speculativecompensation amount).

[0147]FIG. 35 shows a block diagram illustrating steps of a method forpreparing a powder of an anti-ferroelectric ceramic material to be usedwhen post-compensation is carried out for lead component.

[0148]FIG. 36 shows a table depicting results obtained in a fifthillustrative experiment (illustrative experiment to observe the changein degree of denseness of the film depending on the post-compensationamount for lead component).

[0149]FIG. 37 shows a block diagram illustrating steps of a method forpreparing a powder of an anti-ferroelectric ceramic material to be usedwhen speculative compensation and post-compensation for lead componentare carried out in combination.

[0150]FIG. 38 shows a table depicting results obtained in a sixthillustrative experiment (illustrative experiment to observe the changein hysteresis characteristic depending on the difference in specificsurface area of SnO₂).

[0151]FIG. 39A shows a sectional view illustrating a state in which thevibrating section is depressed.

[0152]FIG. 39B shows a sectional view illustrating a structure tosuppress depression of the vibrating section.

[0153]FIG. 40 illustrates a first method for producing a ceramic elementin which the depth of a hollow space is 10 μm.

[0154]FIG. 41A illustrates a step of a second method for producing aceramic element in which the depth of a hollow space is 10 μm, depictinga state in which a paste is formed on a first layer which serves as abase plate so that a second layer is provided.

[0155]FIG. 41B shows a step illustrating a state in which a third layerwhich serves as a closing plate is stacked on the second layer.

[0156]FIG. 41C shows a step illustrating a state in which a stackedcompact composed of three layers is sintered and integrated into oneunit as a substrate.

[0157]FIG. 42 illustrates the amount of depression of the vibratingsection in a seventh illustrative experiment (illustrative experiment toobserve the amount of depression of the vibrating section depending onthe thickness of the second layer and the anti-ferroelectric film andthe change in displacement obtained when the peak voltage is applied inan ordinary manner).

[0158]FIG. 43 shows a table depicting results of the seventhillustrative experiment.

[0159]FIG. 44 shows a table depicting results of an eighth illustrativeexperiment (illustrative experiment to observe the hysteresischaracteristic (voltage-bending displacement characteristic) and thedifference in displacement-retaining ratio for each of Example 17 andComparative Example 16).

[0160]FIG. 45 shows a characteristic curve illustrating the change instrain with respect to the voltage applied to the bulk-type element(hysteresis characteristic).

[0161]FIG. 46 shows a timing chart illustrating an electric potentialwaveform to be applied to the pair of electrodes in order to measure thevoltage-bending displacement characteristic concerning Example 17 andComparative Example 16.

[0162]FIG. 47 shows a characteristic curve illustrating thevoltage-bending displacement characteristic (hysteresis characteristic)concerning Example 17.

[0163]FIG. 48 shows a characteristic curve illustrating thevoltage-bending displacement characteristic (hysteresis characteristic)concerning Comparative Example 16.

[0164]FIG. 49 shows a structure concerning an applied embodiment inwhich the ceramic element according to the first embodiment (analogdisplacement type and digital displacement type) is applied to a displaydevice.

[0165]FIG. 50 shows a magnified plan view illustrating an arrangement ofactuator elements (picture elements or image pixels) of the displaydevice concerning the applied embodiment.

[0166]FIG. 51A illustrates operation (light emission state and light offstate) of the display device concerning the applied embodiment.

[0167]FIG. 51B illustrates operation (light emission state and light offstate) of a display device concerning a comparative example.

[0168]FIG. 52 shows a structure concerning an applied embodiment inwhich the ceramic element according to the third embodiment is appliedto a display device.

[0169]FIG. 53 shows an exploded view of a structure concerning anapplied embodiment in which the ceramic element according to the firstand second embodiments is applied to a relay device (hereinafter simplyreferred to as “relay device concerning the applied embodiment).

[0170]FIG. 54 shows an assembled structure illustrating the relay deviceconcerning the applied embodiment.

[0171]FIG. 55A illustrates the embodiment in which a plate spring is ina state of no contact with respect to an opposing terminal plate withoutdisplacing the actuator element (switching element) of the relay deviceconcerning the applied embodiment.

[0172]FIG. 55B illustrates the embodiment in which the plate spring isin a state of contact with respect to the opposing terminal plate bydisplacing the actuator element (switching element) of the relay deviceconcerning the applied embodiment.

[0173]FIG. 56A illustrates a state in which a voltage V=0 is applied toa pair of control electrodes of a capacitor unit concerning a firstapplied embodiment wherein the ceramic element according to the firstembodiment (analog displacement type) is applied to acapacitance-variable capacitor.

[0174]FIG. 56B illustrates a state in which a voltage V=V1 is applied tothe pair of control electrodes of the capacitor unit.

[0175]FIG. 57A illustrates a state in which a voltage V=V2 is applied tothe pair of control electrodes of the capacitor unit.

[0176]FIG. 57B illustrates a state in which a voltage V=V3 is applied tothe pair of control electrodes of the capacitor unit.

[0177]FIG. 58 shows a structure concerning a second applied embodimentwherein the ceramic element according to the second embodiment (firstanalog displacement type) is applied to a capacitance-variablecapacitor.

BEST MODE FOR CARRYING OUT THE INVENTION

[0178] Three illustrative embodiments of the ceramic element accordingto the present invention will be explained below with reference to FIGS.1 to 48. Explanation will be further made with reference to FIGS. 49 to58 for a display device concerning an applied embodiment, a relay deviceconcerning an applied embodiment, and a capacitance-variable capacitorconcerning an applied embodiment.

[0179] At first, as shown in FIG. 1, a ceramic element 100A according tothe first embodiment has a substrate 10 composed of, for example, aceramic. An actuator element 12 is arranged at a predetermined positionon the substrate 10.

[0180] The substrate 10 has a first principal surface which is acontinuous surface (flushed surface). A hollow space 14 is provided-at aposition corresponding to the actuator element 12. Each of the hollowspaces 14 communicates with the outside through a through-hole 16 havinga small diameter provided through a second end surface of the substrate10.

[0181] A portion of the substrate 10, at which the hollow space 14 isformed, is thin-walled. The other portion of the substrate 10 isthick-walled. The thin-walled portion has a structure which tends toundergo vibration in response to an external stress, and thus itfunctions as a vibrating section 18. The portion other than the hollowspace 14 is thick-walled, and it functions as a fixed section 20 forsupporting the vibrating section 18.

[0182] That is, the substrate 10 has a stacked structure comprising abase plate 10A as a lowermost layer, a spacer plate 10B as anintermediate layer, and a closing plate 10C as an uppermost layer. Thesubstrate 10 can be recognized as an integrated structure in which thehollow space 14 is formed at the position corresponding to the pictureelement in the spacer plate 10B. The base plate 10A functions as areinforcing substrate, and it also functions as a substrate for wiring.The substrate may be produced by means of the integrated sintering, orit may be produced by joining individually produced components.

[0183] As shown in FIG. 1, the actuator element 12 comprises thevibrating section 18 and the fixed section 20 as described above. Theactuator element 12 further comprises a main actuator element 26including an anti-ferroelectric film 22 formed directly on the vibratingsection 18, and a pair of electrodes (a first electrode 24 a and asecond electrode 24 b) formed on an upper surface of theanti-ferroelectric film 22.

[0184] Shapes of the respective members will now be explained withreference to FIGS. 2 to 5C. At first, as shown in FIG. 2, the hollowspace 14, which is formed in the substrate 10 (see FIG. 1), has acircumferential surface, for example, having a circular planarconfiguration. That is, the vibrating section 18 has, for example, acircular planar configuration (see broken lines). The anti-ferroelectricfilm 22 also has a circular planar configuration (see chain lines). Thepair of electrodes 24 a, 24 b form an outer circumferentialconfiguration which is circular as well (see solid lines). In thisembodiment, the vibrating section 18 is designed to have the largestsize. The outer circumferential configuration of the pair of electrodes24 a, 24 b is designed to have the second largest size. The planarconfiguration of the anti-ferroelectric film 22 is designed to have thesmallest size. Alternatively, it is allowable to make design so that theouter circumferential configuration of the pair of electrodes 24 a, 24 bis largest.

[0185] The pair of electrodes 24 a, 24 b formed on theanti-ferroelectric film 22 have, for example, a spiral planarconfiguration as shown in FIG. 3, in which the pair of electrodes 24 a,24 b are parallel to one another and they are separated from each otherto form a spiral structure composed of several turns. The number ofturns of the spiral is actually not less than 5 turns. However, FIG. 3illustratively shows 3 turns in order to avoid complicated illustration.

[0186] The planar configuration of the pair of electrodes 24 a, 24 b isnot limited to the spiral configuration as shown in FIG. 3. The planarconfiguration may be a configuration as shown in FIG. 4. Specifically,each of the pair of electrodes 24 a, 24 b has a configuration composedof a trunk 28, 30 which extends toward the center of theanti-ferroelectric film 22, and a lot of branches 32, 34 branched fromthe trunk 28, 30. In this configuration, the pair of electrodes 24 a, 24b are separated from each other, and they are arranged complementarily(hereinafter referred to as “branched configuration” for convenience).

[0187] The foregoing embodiment has been explained as one having thecircular planar configuration of the vibrating section 18, the circularplanar configuration of the anti-ferroelectric film 22, and the circularouter circumferential configuration formed by the pair of electrodes 24a, 24 b. Alternatively, those usable as the planar configurations andthe outer circumferential configuration include oblong configurationsand elliptic configurations. Further alternatively, both of the planarconfiguration of the vibrating section 18 and the planar configurationof the anti-ferroelectric film 22 may be rectangular configurations withsmoothed corners. Further alternatively, both of the planarconfiguration of the vibrating section 18 and the planar configurationof the anti-ferroelectric film 22 may be polygonal configurations (forexample, octagonal configurations) with respective apex angle portionshaving rounded shapes.

[0188] The configuration of the vibrating section 18, the planarconfiguration of the anti-ferroelectric film 22, and the outercircumferential configuration formed by the pair of electrodes 24 a, 24b may be combinations of circular and elliptic configurations, orcombinations of rectangular and elliptic configurations, without anyspecial limitation.

[0189] The planar configuration of the pair of electrodes 24 a, 24 b isnot limited to the spiral configuration and the branched configurationsas described above. The planar configuration may be a comb-shapedconfiguration as shown in FIG. 5A. In this embodiment, it is preferablethat the vibrating section 18 has a configuration with a length-to-widthratio (aspect ratio) of not more than 0.25 or not less than 4.0 to forma pair of comb-shaped electrodes 24 a, 24 b so that a large number ofcomb teeth are arranged in a direction along the longitudinal directionof the vibrating section 18.

[0190] The following fact has been revealed for the ceramic element 100Aaccording to the first embodiment. That is, when the average filmthickness of the anti-ferroelectric film 22 and the pitch between thepair of electrodes 24 a, 24 b are specified, there are given the analogdisplacement type in which the displacement amount of the actuatorelement 12 is changed in an analog manner depending on the voltage(applied voltage) applied to the pair of electrodes 24 a, 24 b, and thedigital displacement type in which the displacement amount of theactuator element 12 is suddenly changed at a point of time at which theapplied voltage becomes to have a certain voltage value to arrive at themaximum displacement amount almost instantaneously. It is noted that theapplied voltage is represented by an absolute value of the positive ornegative voltage.

[0191] Specifically, for example, as shown in FIGS. 5A and 5B, assumingthat the average film thickness of the anti-ferroelectric film 22 of theactuator element 12 is “t” (see FIG. 5B), and the pitch between the pairof electrodes 24 a, 24 b is “p” (see FIG. 5A), the following fact hasbeen revealed. That is, the analog displacement type is given if p/t≦2.5is satisfied, and the digital displacement type is given if p/t>2.5 issatisfied. According to these relational expressions it is understoodthat on condition that the pitch p between the pair of electrodes 24 a,24 b is constant, the analog displacement type is given if the averagefilm thickness t is thick, and on the contrary, the digital displacementtype is given if the average film thickness t is thin.

[0192] The operation principles of the analog displacement type and thedigital displacement type will be explained with reference to FIGS. 6Ato 8D.

[0193]FIGS. 6A to 6D and FIGS. 8A to 8D illustrate embodiments in whicheach of the pair of electrodes 24 a, 24 b is provided as one individualrespectively in order to simplify the explanation. The embodiments shownin FIGS. 6A to 6D and 8A to 8D illustrate the operation performed afterthe anti-ferroelectric film 22 is subjected to the polarizationtreatment by previously applying a predetermined electric field to theanti-ferroelectric film 22. The phase transition region (regionindicated by oblique lines) Zt shown in FIGS. 6A to 6D and 8A to 8D doesnot depict the strict distribution, which persistently represents anconceptual image.

[0194] At first, the operation principle of the analog displacement typewill be explained with reference to the conceptual illustrations ofoperation shown in FIGS. 6A to 6D.

[0195] At first, as shown in FIG. 6A, when the first electrode 24 a andthe second electrode 24 b are allowed to have, for example, the groundelectric potential respectively to make the applied voltage V betweenthe pair of electrodes 24 a, 24 b to be zero, no electric field isgenerated in the actuator element 12. Therefore, the initial state isgiven, i.e., no bending displacement is generated in the first direction(direction for the pair of electrodes 24 a, 24 b formed on theanti-ferroelectric film 22 to face the free space).

[0196] Next, observation is made for the case in which the voltage value(level) of the voltage V applied to the pair of electrodes 24 a, 24 b isgradually increased to be V1, V2, and V3. At first, as shown in FIG. 6B,when there is given the applied voltage V=V1 (>0V), i.e., when theapplied voltage V is the voltage V1 which is smaller than apredetermined voltage Vd (hereinafter simply referred to as“predetermined voltage Vd”) required to the cause the phase transitionin the anti-ferroelectric film 22, then the electric field generated inthe actuator element 12 is weak. Therefore, no phase transition occursin the anti-ferroelectric film 22. Accordingly, the bending displacementin the first direction is not caused in the actuator element 12 (seebending displacement amount at the voltage V1 shown in FIG. 7).

[0197] As shown in FIG. 6C, the electric field intensity is sufficientto cause the phase transition in a region in which the distance betweenthe pair of electrodes 24 a, 24 b is shortest and in a region which isnearest to the pair of electrodes 24 a, 24 b, at and after the stage inwhich the applied voltage V exceeds the predetermined voltage Vd. Thephase transition occurs in such regions (occurrence of the phasetransition region Zt). The mechanical displacement is generated inaccordance with the phase transition. The displacement is amplified bythe vibrating section 18. Thus, the actuator element 12 is displaced inthe first direction (see bending displacement amount at the voltage V2shown in FIG. 7).

[0198] As shown in FIG. 6D, the region, in which the electric fieldintensity is sufficient to cause the phase transition, is graduallywidened as the applied voltage V is further increased. The phasetransition is also caused in a region in which the distance between thepair of electrodes 24 a, 24 b is long and in a region which is far fromthe pair of electrodes 24 a, 24 b (spread of the phase transition regionZr). In this situation, the mechanical displacement of the actuatorelement 12 is increased in accordance with the spread of the phasetransition region Zt (see bending displacement amount at the voltage V3shown in FIG. 7).

[0199] As described above, in the case of the analog displacement type,the bending displacement amount of the actuator element 12 is changed inan analog manner in accordance with the increase in applied voltage V.FIG. 7 shows an example of the bending displacement characteristic ofthe analog displacement type. The ceramic element, which exhibits thebending displacement characteristic shown in FIG. 7, is an element whichmakes displacement in an analog manner with respect to the appliedvoltage V of 60 V to 180 V. The average film thickness t of theanti-ferroelectric film 22 is 30 μm, and the pitch p between the pair ofelectrodes 24 a, 24 b is 15 μm. The dimension of the vibrating section18 resides in a circular planar configuration having a diameter of 1 mm,in which the thickness is 0.01 mm.

[0200] Next, the operation principle of the digital displacement typewill be explained with reference to the conceptual illustrations ofoperation shown in FIGS. 8A to 8D.

[0201] At first, as shown in FIG. 8A, when the first electrode 24 a andthe second electrode 24 b are allowed to have, for example, the groundelectric potential respectively to make the applied voltage between thepair of electrodes 24 a, 24 b to be zero, no electric field is generatedin the actuator element 12. Therefore, the initial state is given, i.e.,no bending displacement is generated in the first direction.

[0202] Next, observation is made for the case in which the voltage value(level) of the voltage V applied to the pair of electrodes 24 a, 24 b isgradually increased to be V1, V2, and V3. At first, as shown in FIG. 8B,when there is given the applied voltage V=V1 (>0V), i.e., when theapplied voltage V is the voltage V1 which is smaller than thepredetermined voltage Vd, then the electric field generated in theactuator element 12 is weak. Therefore, no phase transition occurs inthe anti-ferroelectric film 22. Accordingly, the bending displacement inthe first direction is not caused in the actuator element 12.

[0203] As shown in FIG. 8C, the actuator element 12 is suddenlydisplaced in the first direction at the stage in which the appliedvoltage V exceeds the predetermined voltage Vd, for example, at thestage in which there is given the applied voltage V=V2, because of thefollowing reason. That is, the relationship of p/t>2.5 is given for theaverage film thickness t of the anti-ferroelectric film 22 and the pitchp between the pair of electrodes 24 a, 24 b, and the electric fielddistribution generated by the applied voltage V (=V2) is uniform.Accordingly, when the voltage is slightly increased, almost all regionsundergo the phase transition to give the phase transition region Zt.Therefore, at the point of time at which the applied voltage V exceedsthe predetermined voltage Vd, the actuator element 12 makes suddendisplacement in the first direction in response to a slight voltagechange, as expected from its bending displacement characteristic. Thus,the actuator element 12 is displaced in the first direction up to themaximum displacement amount only by applying a voltage which is slightlyhigher than the voltage V2.

[0204] As shown in FIG. 8D, the electric field generated in the actuatorelement 12 is intense at the point of time at which the applied voltageV is increased to be, for example, a voltage V3 higher than the voltageV2. Therefore, all of the region of the anti-ferroelectric film 22interposed between the pair of electrodes 24 a, 24 b is the phasetransition region Zt. Moreover, the actuator element 12 does not undergofurther increase in bending displacement at this stage, because it isdisplaced to the maximum displacement amount in response to the voltageslightly exceeding the voltage V2.

[0205] As described above, the characteristic of the digitaldisplacement type is not one in which the bending displacement amount ofthe actuator element 12 is gradually increased in accordance with theincrease in applied voltage V. The actuator element 12 is suddenlydisplaced in the first direction at the point of time at which theapplied voltage V exceeds the predetermined voltage Vd required to causethe phase transition in the anti-ferroelectric film 22. The actuatorelement 12 is displaced up to the maximum displacement amount when thevoltage is slightly increased from the predetermined voltage Vd.

[0206] Next, explanation will be made with reference to FIGS. 9A to 9Cand FIGS. 10A to 10C for the function associated with the displacementin the first direction of the actuator element 12 of the analogdisplacement type, together with a comparative example. The embodimentor the example shown in FIGS. 9A to 9C and FIGS. 10A to 10C representsprocess of the displacement in the first direction of the actuatorelement shown in FIG. 5A along the cross section taken along the lineB-B.

[0207] In the comparative example, a piezoelectric/electrostrictive film36 is used in place of the anti-ferroelectric film 22 according to theembodiment of the present invention as shown in FIG. 7A. The elementconcerning the comparative example exhibits a bending displacementcharacteristic similar to that obtained by the digital displacementtype.

[0208] At first, as shown in FIG. 9A, no voltage (difference in electricpotential) is generated between the pair of electrodes 24 a, 24 b in theinitial state. Therefore, no elongation occurs in the anti-ferroelectricfilm 22, and the displacement of the actuator element 12 is maintainedto be zero. This situation is also given for the comparative example(see FIG. 10A).

[0209] Next, when the voltage V is applied to the pair of electrodes 24a, 24 b of the actuator element 12, the actuator element 12 starts tomake displacement in the first direction at the point of time at whichthe applied voltage V exceeds the predetermined voltage Vd. Thedisplacement amount is increased as the applied voltage is increased.FIG. 9B shows a bending displacement state in which the applied voltageV to the pair of electrodes 24 a, 24 b is the voltage V3.

[0210] On the other hand, in the case of the comparative example asshown in FIG. 10B, the actuator element 12 is suddenly displaced up tothe maximum displacement amount in a digital manner at the point of timeat which the applied voltage V to the pair of electrodes 24 a, 24 b isthe predetermined voltage Vd.

[0211] Next, when the voltage application to the pair of electrodes 24a, 24 b is stopped so that the voltage between the pair of electrodes 24a, 24 b is 0 V, then as shown in FIG. 9C, the displacement, which hasbeen once generate, is maintained as it is owing to the “effect to storethe strain state of the ferroelectric phase (shape memory effect)” ofthe anti-ferroelectric film 22. On the other hand, in the case of thecomparative example, as shown in FIG. 10C, when the voltage between thepair of electrodes 24 a, 24 b is 0 V to give the no voltage-loadedstate, then the displacement, which has been generated by the voltageapplication, is returned to the state of zero (i.e., the initial state)upon the stop of voltage application performed thereafter.

[0212] In other words, the ceramic element 100A according to the firstembodiment has the structure comprising the main actuator element 26having the anti-ferroelectric film 22 formed on the vibrating section 18which is vibratingly supported by the fixed section 20. Accordingly,when the voltage V is applied to the pair of electrodes 24 a, 24 b, theanti-ferroelectric film 22 of the main actuator element 26 undergoes thephase transition caused by the external electric field brought about theapplied voltage V. The mechanical displacement is generated inaccordance with the phase transition. The displacement is amplified bythe vibrating section 18, and thus the actuator element 12 is displacedin the first direction.

[0213] Once the actuator element 12 is displaced in the first direction,the displacement is maintained as it is, even when the voltageapplication to the pair of electrodes 24 a, 24 b is stopped (forexample, electric field=0). Accordingly, even when it is necessary tomaintain the displacement generated in the actuator element 12 for acertain period of time, it is unnecessary to continuously apply thevoltage to the pair of electrodes 24 a, 24 b. In order to restore thedisplacement generated in the actuator element 12 to the original state,a small reverse bias voltage may be applied to the pair of electrodes 24a, 24 b. Specifically, it is sufficient to apply a voltage to cause thephase transition from the ferroelectric phase to the anti-ferroelectricphase.

[0214] As described above, in the ceramic element 100A according to thefirst embodiment, the mechanical displacement amount is changed in theanalog manner or in the digital manner in accordance with the voltage Vapplied to the pair of electrodes 24 a, 24 b. Further, the displacementamount, which is equivalent to that obtained when the voltage isapplied, can be maintained in the no voltage-loaded state aftercompletion of the application of the applied voltage V.

[0215] Further, as shown in FIG. 11A, the ceramic element 100A accordingto the first embodiment has the following feature, as exemplified by thecase in which the planar configuration of the pair of electrodes 24 a,24 b is, for example, the spiral configuration. That is, when thevoltage V, which is not less than the predetermined voltage Vd, isapplied to the pair of electrodes 24 a, 24 b, then the portion of thesurface of the anti-ferroelectric film 22, which is disposed between thepair of electrodes 24 a, 24 b, makes expansion in the superficialdirection as shown in FIG. 11B. Therefore, the actuator element 12 (seeFIG. 1) makes large bending displacement in the first direction in astable manner.

[0216] On the other hand, in the case of the comparative example, whenthe voltage V, which is not less than the predetermined voltage Vd, isapplied to the pair of electrodes 24 a, 24 b, then the portion of thesurface of the piezoelectric/electrostrictive film 36 between the pairof electrodes 24 a, 24 b makes expansion in an anisotropic manner asshown in FIG. 11C (expansion occurs in the direction along the pair ofelectrodes 24 a, 24 b, but contraction occurs in the directionperpendicular thereto). Therefore, the bending displacement amount ofthe actuator element 12 is small, and the displacement is caused invarious directions in an unstable manner.

[0217] As described above, in the ceramic element 100A according to thefirst embodiment, the mechanical displacement amount is changed in theanalog manner or in the digital manner in accordance with the voltage Vapplied to the pair of electrodes 24 a, 24 b. Further, the displacementamount, which is equivalent to that obtained when the voltage isapplied, can be maintained in the no voltage-loaded state or in the lowvoltage-loaded state after completion of the application of the appliedvoltage V. Accordingly, the magnitude of the displacement amount can beprecisely controlled corresponding to the applied voltage V. Moreover,the large displacement-generating force, which exceeds those obtained bythe piezoelectric/electrostrictive element, can be obtained even when aminute element is used.

[0218] In the ceramic element 100A according to the first embodiment,the displacement amount, which is approximately equivalent to thatobtained when the voltage is applied, can be maintained in the novoltage-loaded state or in the low voltage-loaded state after completionof the application of the applied voltage V as described above.Accordingly, when the ceramic element is applied to a variety ofapplications (for example, display devices and filters), then theelectric wiring for driving the element can be simplified, and theproduction cost can be effectively reduced.

[0219] As shown in FIGS. 12A to 13, in the ceramic element 100Aaccording to the first embodiment, it is preferable that thecross-sectional configuration concerning the shortest dimension mpassing through the center of the vibrating section 18 satisfies thefollowing condition. In FIGS. 12A to 13, the pair of electrodes 24 a, 24b are not depicted in order to avoid complicated illustration.

[0220] That is, as shown in FIG. 12B, at least a part of the uppersurface of the anti-ferroelectric film 22 in the vicinity of its centermakes, in the no voltage-loaded state (state of the electric field E=0),protrusion in a direction directed oppositely to the vibrating section18 from a reference line L formed by connecting one outermost localminimum point P1 and the other outermost local minimum point P2 adjacentto the fixed section 20.

[0221] The vicinity of the center of the anti-ferroelectric film 22 isherein defined as follows as shown in FIG. 12A. Concerning the shortestdimension m, boundary portions between the upper surface of the fixedsection 20 and the upper surface of the vibrating section 18 are definedas one boundary point K1 and the other boundary point K2 respectively.When the shortest dimension m is regarded to be 100, the vicinity of thecenter of the anti-ferroelectric film 22 is indicated by a central rangea3 of 40%, except for a range al of 30% ranging from the one boundarypoint K1 toward the center of the shortest dimension m, and a range a2of 30% ranging from the other boundary point K2 toward the center of theshortest dimension m.

[0222] The one outermost local minimum point P1 is defined as follows asshown in FIG. 12B. Concerning the shortest dimension m, a plurality oflocal minimum points are formed on a projection line concerning theupper surface of the vibrating section 18 (or the first principalsurface of the anti-ferroelectric film 22 in some cases) with respect tothe plane of the shortest dimension. Among the plurality of the localminimum points, the one outermost local minimum point P1 corresponds toa local minimum point which is closest to the one boundary point K1.Among the plurality of the local minimum points, the other outermostlocal minimum point P2 corresponds to a local minimum point which isclosest to the other boundary point K2.

[0223] In this case, on condition that the shortest dimension m isregarded to be 100, the one outermost local minimum point P1 isacknowledged to be a local minimum point which exists within a range of40% (one local minimum point-existing region b1) ranging from the oneboundary point K1 toward the center of the shortest dimension m, andwhich is closest to the one boundary point K1. The other outermost localminimum point P2 is acknowledged to be a local minimum point whichexists within a range of 40% (the other local minimum point-existingregion b2) ranging from the other boundary point K2 toward the center ofthe shortest dimension m, and which is closest to the other boundarypoint K2.

[0224] As shown in FIG. 12B, the outermost local minimum points P1, P2may exist under the upper surface of the fixed section 20. As shown inFIG. 12C, the outermost local minimum points P1, P2 may exist over theupper surface of the fixed section 20.

[0225] As shown in FIG. 13, for example, when the other outermost localminimum point P2 does not exist in the other local minimumpoint-existing region a2, the other boundary point K2 is acknowledged tobe the other outermost local minimum point P2. Such acknowledgment ismade in the same manner for the one outermost local minimum point P1.

[0226] Under the foregoing condition, i.e., under the condition that “atleast a part of the upper surface in the vicinity of the center of theanti-ferroelectric film 22 makes, in the no voltage-loaded state,protrusion in a direction directed oppositely to the vibrating section18 from a reference line L”, it is more preferable that the amount ofprotrusion t satisfies m/1000≦t≦m/10 provided that the length of theshortest dimension is m.

[0227] By satisfying the foregoing condition, the produced actuatorelements 12 is allowed to necessarily make large displacement in thefirst direction, making it possible to achieve improvement in yield whenit is used for various electronic instruments and the like.

[0228] Further, the actuator element 12 having the shape as shown inFIGS. 12B, 12C, and 13 is formed such that it is bent at the portions ofthe outermost local minimum points P1, P2 of the upper surface of thevibrating section 18. Therefore, the flexural rigidity of the vibratingsection 18 is large as compared with the actuator element 12 having theshape as shown in FIG. 12. As a result, when an identical displacementamount is generated, the stress generated in the vibrating section 18 isfavorably small, giving an advantage that the strength of the vibratingsection 18 and the margin of reliability are improved. The shapedescribed above Is especially effective for the characteristic of theceramic element 100A according to the first embodiment which makes itpossible to obtain the large displacement.

[0229] Next, a modified embodiment (100Aa) of the ceramic element 100Aaccording to the first embodiment will be explained with reference toFIGS. 14A to 15B. Components or parts corresponding to those shown inFIGS. 5A and 5B are designated by the same reference numerals, duplicateexplanation of which will be omitted.

[0230] As shown in FIGS. 14A and 14B, the ceramic element 100Aaaccording to the modified embodiment is constructed in approximately thesame manner as the ceramic element 100A according to the firstembodiment described above. However, the former is different from thelatter in that the former has a region (a) in which the arrangementpitch of the comb teeth of the pair of electrodes 24 a, 24 b is dense,and a region (b) in which the arrangement pitch is sparse. In the region(a) in which the arrangement pitch is dense, the distance between thepair of electrodes 24 a, 24 b is small. Therefore, when a constantvoltage is applied to the pair of electrodes 24 a, 24 b, a higherelectric field is always generated in this region as compared with theregion (b) in which the arrangement pitch is sparse (the distancebetween the pair of electrodes 24 a, 24 b is large).

[0231] Accordingly, when the voltage V applied to the pair of electrodes24 a, 24 b is low, as shown in FIG. 15A, the phase transition region isexpanded in accordance with the increase in the applied voltage V onlyin the portion corresponding to the region (a) in which the arrangementpitch is dense, of the anti-ferroelectric film 22, in a certain voltagerange (voltage levels V1 to V2), and the bending displacement occurs inthe first direction in a displacement amount corresponding to the levelof the applied voltage V.

[0232] Next, when the applied voltage V is in a voltage range (voltagelevels V2 to V3) higher than the voltage range described above, as shownin FIG. 15B, the phase transition region is expanded in accordance withthe increase in the applied voltage V also in the region correspondingto the region (b) in which the arrangement pitch is sparse. Therefore,this region also undergoes the bending displacement in the firstdirection in a displacement amount corresponding to the level of theapplied voltage V, together with the region (a) in which the arrangementpitch is dense.

[0233] As a result, the ceramic element 100Aa according to this modifiedembodiment makes it possible to obtain the actuator element 12 in whichthe displacement form differs in a plurality of regions which arespatially separated from each other.

[0234] Next, a ceramic element 100B according to the second embodimentwill be explained with reference to FIGS. 16 to 21. Components or partscorresponding to those shown in FIG. 1 are designated by the samereference numerals, duplicate explanation of which will be omitted.

[0235] As shown in FIG. 16, the ceramic element 100B according to thesecond embodiment is constructed in approximately the same manner as theceramic element 100A according to the first embodiment described above.However, the former is different from the latter in that the mainactuator element 26 is provided with an anti-ferroelectric film 22 andan upper electrode 40 a and a lower electrode 40 b formed on upper andlower surfaces of the anti-ferroelectric film 22 respectively.

[0236] It has been revealed for the ceramic element 100B according tothe second embodiment that there are provided the analog displacementtype in which the displacement amount of the actuator element 12 ischanged in an analog manner in accordance with the voltage (appliedvoltage) applied between the upper electrode 40 a and the lowerelectrode 40 b, and the digital displacement type in which thedisplacement amount of the actuator element 12 is suddenly changed atthe point of time at which the applied voltage V becomes to have acertain voltage value to arrive at the maximum displacement amountalmost instantaneously, by defining the respective areas of the upperelectrode 40 a and the lower electrode 40 b, or the film thicknessdistribution of the anti-ferroelectric film 22 interposed between theupper electrode 40 a and the lower electrode 40 b. It is noted that theapplied voltage V is represented by an absolute value of the positive ornegative voltage.

[0237] Specifically, assuming that the area of the upper electrode 40 aof the actuator element 12 is A, and the area of the lower electrode 40b is B, the following fact has been revealed. That is, if therelationship of (A/B)≧2 or (A/B)≦0.5 is satisfied, or if the filmthickness distribution of the anti-ferroelectric film 22 has adispersion of not less than 20%, then the analog displacement type isprovided. If the relationship of 0.5<(A/B)<2 is satisfied, or if thefilm thickness distribution of the anti-ferroelectric film 22 has adispersion of less than 20%, then the digital displacement type isprovided.

[0238] That is, for example, when the dispersion of the film thicknessdistribution of the anti-ferroelectric film 22 is less than 20%, theanalog displacement type is provided by satisfying the relationship of(A/B)≧2 or (A/B)≦0.5 (see FIG. 17), or the digital displacement type isprovided by satisfying the relationship of 0.5<(A/B)<2 (see FIG. 20A).When the area A of the upper electrode 40A and the area B of the lowerelectrode 40 b have the relationship of 0.5<(A/B)<2, the analogdisplacement type is provided if the dispersion of the film thicknessdistribution of the anti-ferroelectric film 22 is not less than 20% (seeFIG. 19A), or the digital displacement type is provided if thedispersion of the film thickness distribution of the anti-ferroelectricfilm 22 is less than 20% (see FIG. 20A).

[0239] As shown in FIG. 17A, the first analog displacement type of theceramic element 100B according to the second embodiment is constructedsuch that the dispersion of the film thickness distribution of theanti-ferroelectric film 22 is less than 20%, and the relationship of(A/B)≦0.5 is satisfied. In this embodiment, the planar configuration ofthe upper electrode 40 a includes, for example, one continuous spiralconfiguration as shown in FIG. 18A and one continuous zigzagconfiguration as shown in FIG. 18B.

[0240] The operation principle of the first analog displacement type ofthe ceramic element 100B according to the second embodiment will now beexplained with reference to FIGS. 17A to 17D.

[0241] At first, when the upper electrode 40 a and the lower electrode40 b are allowed to have, for example, the ground electric potentialrespectively to make the applied voltage V between the upper electrode40 a and the lower electrode 40 b to be zero, no electric field isgenerated in the actuator element 12. Therefore, the initial state isgiven, i.e., no bending displacement is generated in the first direction(direction for the upper electrode 40 a formed on the anti-ferroelectricfilm 22 to face the free space).

[0242] Next, observation is made for the case in which the voltage value(level) of the voltage V applied between the upper electrode 40 a andthe lower electrode 40 b is gradually increased to be V1, V2, and V3. Atfirst, when there is given the applied voltage V=V1 (>0 V), i.e., whenthe applied voltage V is the voltage V1 which is smaller than thepredetermined voltage Vd, the electric field generated in the actuatorelement 12 is weak. Therefore, no phase transition occurs in theanti-ferroelectric film 22. Accordingly, the bending displacement in thefirst direction is not caused in the actuator element 12.

[0243] As shown in FIG. 17C, the phase transition occurs in the portioncorresponding to the strong electric field (for example, the regionnearest to the upper electrode 40) in the electric field distributiongenerated in the anti-ferroelectric film 22, at and after the stage inwhich the applied voltage V exceeds the predetermined voltage Vd(occurrence of the phase transition region Zt). The mechanicaldisplacement is generated in the anti-ferroelectric film 22 inaccordance with the phase transition of the strong electric fieldportion. The displacement is amplified by the vibrating section 18.Thus, the actuator element 12 is displaced in the first direction.

[0244] As shown in FIG. 17D, the region, in which the electric fieldintensity is sufficient to cause the phase transition, is graduallywidened as the applied voltage V is increased. The phase transition isalso caused in the region far from the upper electrode 40 (spread of thephase transition region Zr). In this case, the mechanical displacementof the actuator element 12 is also increased in accordance with thespread of the phase transition region Zt.

[0245] As described above, in the case of the first analog displacementtype of the ceramic element 100B according to the second embodiment, thebending displacement amount of the actuator element 12 is also changedin an analog manner in accordance with the increase in applied voltageV, in the same manner as the ceramic element 100A (analog displacementtype) according to the first embodiment described above.

[0246] Next, as shown in FIG. 19A, the second analog displacement typeof the ceramic element 100B according to the second embodiment isconstructed such that the area A of the upper electrode 40 a and thearea B of the lower electrode 40 b have the relationship of 0.5<(A/B)<2,and the dispersion of the film thickness distribution of theanti-ferroelectric film 22 is not less than 20%.

[0247] The operation principle of the second analog displacement typewill now be explained with reference to FIGS. 19A to 19D.

[0248] At first, when the upper electrode 40 a and the lower electrode40 b are allowed to have, for example, the ground electric potentialrespectively to make the applied voltage V between the upper electrode40 a and the lower electrode 40 b to be zero, no electric field isgenerated in the actuator element 12. Therefore, the initial state isgiven, i.e., no bending displacement is generated in the firstdirection.

[0249] Next, observation is made for the case in which the voltage value(level) of the voltage V applied between the upper electrode 40 a andthe lower electrode 40 b is gradually increased to be V1, V2, and V3. Atfirst, when there is given the applied voltage V=V1 (>0 V), i.e., whenthe applied voltage V is the voltage V1 which is smaller than thepredetermined voltage Vd, the electric field generated in the actuatorelement 12 is weak. Therefore, no phase transition occurs in theanti-ferroelectric film 22. Accordingly, the bending displacement in thefirst direction is not caused in the actuator element 12.

[0250] As shown in FIG. 19C, the phase transition occurs in the portioncorresponding to the strong electric field (for example, the region inwhich the spacing distance between the upper electrode 40 a and thelower electrode 40 b is narrow) in the electric field distributiongenerated in the anti-ferroelectric film 22, at and after the stage inwhich the applied voltage V exceeds the predetermined voltage Vd(occurrence of the phase transition region Zt). The mechanicaldisplacement is generated in the anti-ferroelectric film 22 inaccordance with the phase transition of the strong electric fieldportion. The displacement is amplified by the vibrating section 18.Thus, the actuator element 12 is displaced in the first direction.

[0251] As shown in FIG. 19D, the region, in which the electric fieldintensity is sufficient to cause the phase transition, is graduallywidened as the applied voltage V is increased. The phase transition isalso caused in the region in which the spacing distance between theupper electrode 40 a and the lower electrode 40 b is wide (spread of thephase transition region Zr). In this case, the mechanical displacementof the actuator element 12 is also increased in accordance with thespread of the phase transition region Zt.

[0252] As described above, in the case of the second analog displacementtype of the ceramic element 100B according to the second embodiment, thebending displacement amount of the actuator element 12 is also changedin an analog manner in accordance with the increase in applied voltageV, in the same manner as the first analog displacement type describedabove. Next, the operation principle of the digital displacement typewill be explained with reference to the conceptual illustrations ofoperation shown in FIGS. 20A to 20D and the bending displacementcharacteristic shown in FIG. 21.

[0253] At first, as shown in FIG. 20A, when the upper electrode 40 a andthe lower electrode 40 b are allowed to have, for example, the groundelectric potential respectively to make the applied voltage V betweenthe upper electrode 40 a and the lower electrode 40 b to be zero, noelectric field is generated in the actuator element 12. Therefore, theinitial state is given, i.e., no bending displacement is generated inthe first direction.

[0254] Next, observation is made for the case in which the voltage value(level) of the voltage V applied between the upper electrode 40 a andthe lower electrode 40 b is gradually increased to be V1, V2, and V3. Atfirst, as shown in FIG. 20B, when there is given the applied voltageV=V1 (>0V), i.e., when the applied voltage V is the voltage V1 which issmaller than the predetermined voltage Vd (for example, 110 V), then theelectric field generated in the actuator element 12 is weak. Therefore,no phase transition is caused in the anti-ferroelectric film 22.Accordingly, the bending displacement in the first direction is notcaused in the actuator element 12 (see the bending displacement amountat the voltage V1 shown in FIG. 21).

[0255] As shown in FIG. 20C, the actuator element 12 is suddenlydisplaced in the first direction at the stage in which the appliedvoltage V exceeds the predetermined voltage Vd, for example, at thestage in which there is given the applied voltage V=V2 (see the bendingdisplacement amount at the voltage V2 shown in FIG. 21), because of thefollowing reason. That is, the area A of the upper electrode 40 a andthe area B of the lower electrode 40 b have the relationship of0.5<(A/B)<2, the dispersion of the film thickness distribution of theanti-ferroelectric film 22 has the relationship of less than 20%, andthe electric field distribution generated by the applied voltage V isuniform. Accordingly, when the voltage is slightly increased, almost allregions become the phase transition region Zt. Therefore, at the pointof time at which the applied voltage V exceeds the predetermined voltageVd, the actuator element 12 makes sudden change up to the maximumdisplacement amount.

[0256] As shown in FIG. 20D, the electric field generated in theactuator element 12 is intense at the point of time at which the appliedvoltage V is increased to be, for example, a voltage V3 higher than thevoltage V2. Therefore, all of the region of the anti-ferroelectric film22 interposed between the upper electrode 40 a and the lower electrode40 b becomes the phase transition region Zt. The displacement amount inthe first direction of the actuator element 12 has been changed to themaximum displacement amount at the stage at which the applied voltage Vexceeds the predetermined voltage Vd. Therefore, the displacement amountis unchanged, although the electric field is intense (see the bendingdisplacement amount at the voltage V3 shown in FIG. 21).

[0257] As described above, the characteristic of the digitaldisplacement type is not one in which the bending displacement amount ofthe actuator element 12 is gradually increased in accordance with theincrease in applied voltage V. The actuator element 12 suddenly makeschange in the digital manner up to the maximum displacement at the pointof time at which the applied voltage V exceeds the predetermined voltageVd.

[0258]FIG. 21 shows an example of the bending displacementcharacteristic of the digital displacement type. The ceramic element,which exhibits the bending displacement characteristic shown in FIG. 21,is an element which makes displacement in a digital manner up to themaximum displacement amount at the point of time at which the appliedvoltage V is about 110 V. The average film thickness t of theanti-ferroelectric film 22 is 15 μm. The dimension of the vibratingsection 18 resides in a circular planar configuration having a diameterof 1 mm, and the thickness is 0.01 mm.

[0259] In a macroscopic viewpoint, the ceramic element 100B according tothe second embodiment (the first and second analog displacement typesand the digital displacement type) also provides the same function andeffect as those obtained by the ceramic element 100A according to thefirst embodiment described above (see FIGS. 6A to 6C). The mechanicaldisplacement amount is changed in the analog manner or in the digitalmanner in accordance with the voltage V applied to the upper electrode40 a and the lower electrode 40 b. Further, the displacement amount,which is equivalent to that obtained upon the voltage application, canbe maintained in the no voltage-loaded state after completion of theapplication of the applied voltage V.

[0260] Next, a modified embodiment (100Ba) of the ceramic element 100Baccording to the second embodiment will be explained with reference toFIGS. 22 to 23B.

[0261] As shown in FIG. 22, the ceramic element 100Ba according to themodified embodiment is constructed in approximately the same manner asthe ceramic element 100B according to the second embodiment describedabove. However, the former is different from the latter in that theformer has a region (c) in which the spacing distance between the upperelectrode 40 a and the lower electrode 40 b is wide and a region (d) inwhich the spacing distance is narrow. This arrangement can be achievedby selectively forming the film thickness distribution of theanti-ferroelectric film 22.

[0262] The distance between the upper electrode 40 a and the lowerelectrode 40 b is small in the region (d) in which the spacing distancebetween the upper electrode 40 a and the lower electrode 40 b is narrow.Therefore, when a constant voltage is applied between the upperelectrode 40 a and the lower electrode 40 b, an electric field is alwaysgenerated in the region (d), which is higher than that generated in theregion (c) in which the spacing distance between the upper electrode 40a and the lower electrode 40 b is wide (the distance between the upperelectrode 40 a and the lower electrode 40 b is large).

[0263] Accordingly, when the voltage applied between the upper electrode40 a and the lower electrode 40 b is low, as shown in FIG. 23A, thephase transition region is spread in accordance with the increase inapplied voltage only at the portion of the anti-ferroelectric film 22corresponding to the region (d) in which the spacing distance betweenthe upper electrode 40 a and the lower electrode 40 b is narrow, in acertain voltage range (voltage levels V1 to V2). Thus, the bendingdisplacement occurs in the first direction in a displacement amountcorresponding to the level of the applied voltage V.

[0264] Next, as shown in FIG. 23B, when the applied voltage V is in avoltage range (voltage levels V2 to V3) higher than the voltage rangedescribed above, the phase transition region is also spread in theportion corresponding to the region in which spacing distance betweenthe upper electrode 40 a and the lower electrode 40 b is wide, inaccordance with the increase in the applied voltage V. Accordingly, thebending displacement also occurs in the first direction in theconcerning portion in a displacement amount corresponding to the levelof the applied voltage V together with the portion (d) in which thespacing distance between the upper electrode 40 a and the lowerelectrode 40 b is narrow.

[0265] As a result, the modified embodiment 100Ba of the ceramic elementaccording to the second embodiment also makes it possible to obtain theactuator element 12 in which the displacement form differs in aplurality of spatially separated regions respectively, in the samemanner as the modified embodiment 100Aa of the ceramic element accordingto the first embodiment described above.

[0266] In the case of the ceramic element 100A according to the firstembodiment (including the modified embodiment 100Aa), the electrodepattern formed for the actuator element 12 comprises the pair ofelectrodes 24 a, 24 b which are formed on the surface of theanti-ferroelectric film 22. In the case of the ceramic element 100Baccording to the second embodiment (including the modified embodiment100Ba), the electrode pattern formed for the actuator element 12comprises the upper electrode 40 a and the lower electrode 40 b whichare formed on the upper and lower surfaces of the anti-ferroelectricfilm 22 respectively. Alternatively, the electrode pattern may be formedas follows. That is, a region having an electrode pattern similar to theelectrode pattern of the ceramic element 100A according to the firstembodiment and a region having an electrode pattern similar to theelectrode pattern of the ceramic element 100B according to the secondembodiment may coexit in one ceramic element or in one continuousanti-ferroelectric film 22.

[0267] It is also possible to adopt an arrangement in which the analogdisplacement type and the digital displacement type coexist in oneceramic element or in one continuous anti-ferroelectric film 22.

[0268] Next, explanation will be made for the respective constitutivecomponents of the actuator element 12 of the ceramic elements 100A, 100Baccording to the first and second embodiments, for example, especiallyfor selection of materials for the respective constitutive components.

[0269] At first, those usable as the ceramic for constructing thevibrating section 18 include, for example, zirconium oxide, aluminumoxide, magnesium oxide, titanium oxide, spinel, mullite, aluminumnitride, silicon nitride, glass, and mixtures thereof.

[0270] Stabilized zirconium oxide is especially preferred because of,for example, high mechanical strength obtained even when the thicknessof the vibrating section 18 is thin, and high toughness. The term“stabilized zirconium oxide” includes stabilized zirconium oxide andpartially stabilized zirconium oxide. As a stabilizer to obtainstabilized zirconium oxide, calcium oxide, magnesium oxide, yttriumoxide, scandium oxide, ytterbium oxide, cerium oxide, or other oxides ofrare earth metals may be contained in an amount of 1 to 30 mole %.Especially, in order to enhance the mechanical strength of the vibratingsection 18, it is preferable to contain yttrium oxide in an amount of1.5 to 6 mole %, and more preferably 2 to 5 mole %.

[0271] When the vibrating section 18 containing the major component ofpartially stabilized zirconium is used, it is desirable to furthercontain and appropriately add 0.1 to 5 mole % of aluminum oxide, 0.1 to10 mole % of titanium oxide, or a mixture of titanium oxide and aluminumoxide, in order to increase the relative displacement amount and controlthe reactivity and the tight adherence between the vibrating section 18and the anti-ferroelectric film 22.

[0272] That is, for example, the following composition is used for theanti-ferroelectric film 22. When it is intended to improve the tightadherence between the vibrating section 18 and the anti-ferroelectricfilm 22, it is preferable to add 0.1 mole % of aluminum oxide.

Pb_(0.99)Nb_(0.02){[Zr_(x)Sn_(1-x)]_(1-y)Ti_(y)}_(0.98)O₃

[0273] wherein 0.5<x<0.6, 0.05<y<0.063, 0.01<Nb<0.03.

[0274] This composition is especially preferred for the ceramic elementhaving the structure in which the second principal surface of theanti-ferroelectric film 22 makes tight adherence to the vibratingsection 18, and the pair of electrodes 24 a, 24 b are formed on theopposing first principal surface, as in the ceramic element 100Aaccording to the first embodiment.

[0275] On the contrary, when it is intended to inhibit the tightadherence between the vibrating section 18 and the anti-ferroelectricfilm 22, it is preferable to add 0.1 to 10 mole % of titanium oxide.This composition is especially preferred for the ceramic element havingthe structure in which the lower electrode 40 b is formed on thevibrating section 18, the anti-ferroelectric film 22 is formed thereon,and the upper electrode 40 a is further formed thereon, as in theceramic element 100B according to the second embodiment, because of thefollowing reason. That is, for example, as shown in FIG. 22, it ispossible to avoid the decrease in displacement amount which would beotherwise caused by the restriction of a joined portion (joined portionbetween the anti-ferroelectric film 22 and the vibrating section 18)brought about when the vibrating section 18 makes tight adherence andjoining with respect to the outer edge section 22 a of theanti-ferroelectric film 22 extending (or protruding) outwardly from thelower electrode 40 b.

[0276] Concerning the vibrating section 18 containing aluminum oxide,when it is intended to inhibit tight adherence between the vibratingsection 18 and the anti-ferroelectric film 22, the following procedureis also preferred. That is, the amount of aluminum oxide is not morethan 2 mole %. When the anti-ferroelectric film 22 is formed by thethick film-forming method, a paste to be converted into theanti-ferroelectric film 22 after sintering is applied in accordance withthe thick film-forming method, and then heating is performed in anoxidizing atmosphere before sintering to apply a binder-removingtreatment. After that, the anti-ferroelectric film 22 is sintered in apredetermined atmosphere.

[0277] Aluminum oxide and titanium oxide described herein may be mixedand added to the stabilized zirconium oxide material. However, a morehomogeneous raw material powder is obtained by mixing and adding thecomponent by means of, for example, the coprecipitation method duringthe process of preparing the stabilized zirconium oxide material.Consequently, it is possible to obtain the vibrating section 18 whichhas a homogeneous texture and which is more excellent in, for example,mechanical strength and durability.

[0278] The vibrating section 18 is composed of a large number of ceramiccrystals. In order to increase the mechanical strength of the vibratingsection 18, the crystal grains desirably have an average grain diameterof 0.05 to 2 μm.

[0279] The spacer plate 10B and the closing plate 10C are joined andintegrated into one unit as the vibrating section 18 and the fixedsection 20 by stacking, sintering, and integrating the green sheets.Therefore, they are desirably made of the same type ceramic.

[0280] However, as for the amount of addition of alumina or the like, itis desirable to make adjustment to give an adding amount different fromthat for the vibrating section 18, if necessary, in order to mitigatestrain such as waviness of the substrate 10 after the stacking,sintering, and integrating steps.

[0281] Clay or the like is generally added as a sintering aid for theceramic in some cases. However, it is necessary to adjust the aidcomponent in order that the composition and the characteristic of theanti-ferroelectric film 22 are not changed by excessively increasing thereactivity with the anti-ferroelectric film 22. That is, it is desirableto restrict, for example, silicon oxide in the substrate 10 to be notmore than 3%, more preferably not more than 1% in a weight ratio.

[0282] Those desirably used as the material for the anti-ferroelectricfilm 22 include those containing a major component of lead zirconate,those containing major components composed of lead zirconate and leadstannate, those obtained by adding lanthanum oxide to lead zirconate,and those obtained by adding lead titanate and lead niobate to acomponent composed of lead zirconate and lead stannate.

[0283] Especially, when the anti-ferroelectric film 22, which containsthe component composed of lead zirconate and lead stannate asrepresented by the following composition, is applied for the film-typeelement such as the ceramic elements 100A, 100B according to the firstand second embodiments, the element can be driven at a relatively lowvoltage, which is especially preferred.

Pb_(0.99)Nb_(0.02){[Zr_(x)Sn_(1-x)]_(1-y)Ti_(y)}_(0.98)O₃

[0284] wherein 0.5<x<0.6, 0.05<y<0.063, 0.01<Nb<0.03.

[0285] The anti-ferroelectric film 22 may be porous. When theanti-ferroelectric film 22 is porous, it is desirable that the porosityis not more than 30%.

[0286] It is preferable that the anti-ferroelectric powder to be used asthe raw material for the anti-ferroelectric film 22 is subjected to drymilling or grinding by using, for example, a dry vibrating mill or a dryattriter before preparing a printing paste, in order to obtain theanti-ferroelectric film 22 which is more dense and which has excellentbending displacement characteristics.

[0287] In this embodiment, it is especially preferable that Ag iscontained in the composition described above in an amount of 1 to 10% byweight as converted into an amount of silver oxide, as the material forthe anti-ferroelectric film 22, in order to obtain the more dense andlarge displacement and in order to obtain more stable shape memorycharacteristics.

[0288] The following means may be used to contain Ag. That is, Ag may beadded in a form of oxide together with other raw material powders duringthe process of preparing the anti-ferroelectric film 22. Alternatively,Ag may be added as silver oxide or as an aqueous solution of silvernitrate to a previously prepared powder of the anti-ferroelectricmaterial. Further alternatively, Ag may be mixed in a form of silveroxide powder or in a form of organic metal compound of Ag when theprinting paste is prepared.

[0289] It is desirable that the thickness of the anti-ferroelectric film22 and the thickness of the vibrating section 18 have the samedimension, because of the following reason. That is, if the thickness ofthe vibrating section 18 is extremely thicker than theanti-ferroelectric film 22 (by one or more digits), the vibratingsection 18 restricts the contraction of the anti-ferroelectric film 22during the sintering step for the anti-ferroelectric film 22 to causethe contraction. For this reason, the extremely thick thickness maycause factors such that the anti-ferroelectric film 22 tends to peel offfrom the vibrating section 18, the densifying process for theanti-ferroelectric film 22 is inhibited, and the residual stress remainsin the anti-ferroelectric film 22 after the sintering, resulting indeterioration of the characteristic.

[0290] On the contrary, if the dimension of the thickness is inapproximately the same degree, the vibrating section 18 follows thecontraction during the sintering step for the anti-ferroelectric film22, making it easy to cause deformation. It is possible to obtain theanti-ferroelectric film 22 which is dense and which has excellentdisplacement characteristics.

[0291] Specifically, the thickness of the vibrating section 18 ispreferably 1 to 50 μm, and more preferably 3 to 20 μn. On the otherhand, the average thickness of the anti-ferroelectric film 22 ispreferably 1 to 100 μm, more preferably 3 to 5 μm, and most preferably 5to 40 μm.

[0292] Preferably, the electrodes 24 a, 24 b (40 a, 40 b) are thin ascompared with the vibrating section 18 and the anti-ferroelectric film22, because the force to restrict the displacement action of theactuator element 12 is weakened. Specifically, the thickness ispreferably 0.01 to 10 μm, and more preferably 0.01 to 5 μm.

[0293] It is preferable that the material for the electrodes 24 a, 24 b(40 a, 40 b) is solid at room temperature, and it is composed of aconductive substance. Those usable for the electrodes include, forexample, metal simple substances or alloys containing, for example,aluminum, titanium, chromium, iron, cobalt, nickel, copper, zinc,niobium, molybdenum, ruthenium, rhodium, silver, stannum, tantalum,tungsten, iridium, platinum, gold, lead, and beryllium. It is needlessto say that these elements may be contained in an arbitrary combination.

[0294] In the case of the ceramic element having the structure in whichthe lower electrode 40 b intervenes between the vibrating section 18 andthe anti-ferroelectric film 22 as in the ceramic element 100B accordingto the second embodiment, it is desirable to have the heat resistance towithstand the sintering temperature for the anti-ferroelectric film 22.It is also preferable to select a material which is excellent iscorrosion resistance, if necessary.

[0295] Next, the method for producing the ceramic elements 100A, 100Baccording to the first and second embodiment will be explained.

[0296] The substrate 10, which includes the vibrating section 18 and thefixed section 20, can be made into an integrated unit by stacking formedlayers provided as green sheets or green tapes by means of thermalpressing and gluing, followed by sintering. For example, the substrate10 shown in FIG. 1 is preferably obtained by stacking three layers ofgreen sheets or green tapes, in which a window having a predeterminedshape to form the hollow space 14 is previously provided in the secondlayer of the three layers before the stacking process. Alternatively,for example, a molded layer may be produced by means of, for example,pressing, casting, or injection molding based on the use of a mold sothat the hollow space (window) 14 and other components may be formedtherein by means of mechanical processing such as cutting, cuttingprocessing, laser processing, and punching by press processing. Thethree-layered structure is shown in FIG. 1. However, four-layered orfive-layered structure may be used so that the rigidity of the substrate10 may be improved, or a layer to be used as a back wiring board may besimultaneously stacked and formed.

[0297] Next, the main actuator element 26 is formed on the vibratingsection 18 of the substrate 10. In this procedure, two methods areavailable including a film-forming method described later on and amethod in which the anti-ferroelectric film 22 is formed in accordancewith, for example, a press molding method based on the use of a mold ora tape-forming method based on the use of a slurry material, theanti-ferroelectric film 22 before sintering is stacked on the vibratingsection 18 of the substrate 10 before sintering by means of thermalpressing and gluing, and they are simultaneously sintered to form theanti-ferroelectric film 22 on the vibrating section 18 of the substrate10.

[0298] In the film-forming method, the anti-ferroelectric film 22 andthe pair of electrodes 24 a, 24 b are stacked on the vibrating section18 in this order. Those appropriately usable as the film-forming methodinclude, for example, thick film methods such as screen printing,application methods such as dipping, and thin film methods such as ionbeam, sputtering, vacuum deposition, ion plating, chemical vapordeposition (CVD), and plating. The wiring arrangements and terminalpads, which are connected to the pair of electrodes 24 a, 24 b, are alsoformed by using the thick film method and the thin film method describedabove.

[0299] For example, the following illustrative production method isadopted for the ceramic element 100A according to the first embodiment.At first, the anti-ferroelectric film 22 is formed on the vibratingsection 18 of the substrate 10 by means of the screen printing method.After that, sintering is performed to join the anti-ferroelectric film22 onto the vibrating section 18 of the substrate 10. In this procedure,in order to improve the joining performance between the substrate 10 andthe anti-ferroelectric film 22 and advantageously integrate thesubstrate 10 and the anti-ferroelectric film 22 into one unit, it ispreferable to carry out sintering for the anti-ferroelectric film 22 inan atmosphere of the anti-ferroelectric material in a tightly sealedvessel. More preferably, it is desirable to increase the atmosphereconcentration.

[0300] The atmosphere sintering is performed, for example, in accordancewith the following method.

[0301] (1) Powder composed of the same components as those of theanti-ferroelectric material, which is used as an evaporation source, isplaced together in the tightly sealed vessel.

[0302] (2) The composition of the anti-ferroelectric material is allowedto previously contain an excessive amount of lead components.

[0303] (3) A plate made of the anti-ferroelectric material is used as asetter.

[0304] The sintering temperature is preferably 900 to 1400° C., and morepreferably 1100 to 1400° C.

[0305] After completion of the joining of the substrate 10 to theanti-ferroelectric film 22, a wiring layer including the pair ofelectrodes 24 a, 24 b is formed by means of the screen printing. Thepattern of the wiring layer includes, for example, a pattern for thevertical selection lines 58, a pattern for the signal lines 60, and anelectrode pattern, as shown in FIG. 50. At this stage (stage of thescreen printing), the electrode pattern has a simple circularconfiguration which is not the spiral configuration as shown in FIG. 3or the branched configuration as shown in FIG. 4.

[0306] After that, portions of the circular electrode pattern to beprocessed are evaporated off by using, for example, an excimer laser.Thus, patterning is performed to provide the spiral configuration asshown in FIG. 3 or the branched configuration as shown in FIG. 4 so thatthe pair of electrodes 24 a, 24 b are produced.

[0307] A heat treatment is performed after completion of the patterningby means of the excimer laser to complete the formation of the mainactuator element 26 on the substrate 10. When the pair of electrodes 24a, 24 b are formed in accordance with the thin film method, the heattreatment is not necessarily required.

[0308] Next, explanation will be made for the production of the ceramicelement 100B according to the second embodiment. In this case, a methodas the film-forming method is adopted to stack the lower electrode 40 b,the anti-ferroelectric film 22, and the upper electrode 40 a on thevibrating section 18 in this order. Specifically, for example, thefollowing illustrative method is adopted.

[0309] At first, aluminum oxide is previously added in an amount of 1mole t to form the vibrating section 18 of the substrate 10. A pastecontaining major components of a platinum powder and an organic binderis applied by printing onto the vibrating section 18 by means of thescreen printing method, followed by a drying step and sintering. Thus,the lower electrode 40 b is formed.

[0310] After that, a paste containing major components of ananti-ferroelectric powder and an organic binder is applied by printingby means of the screen printing method in the same manner as describedabove. After drying, a degreasing treatment is performed for 1 hour at500 to 600° C. in an oxidizing atmosphere.

[0311] Subsequently, the atmosphere sintering is performed in the samemanner as performed in the first embodiment to form theanti-ferroelectric film 22. After that, a paste principally composed ofa solvent and an organic metal compound containing gold is applied byprinting by means of the screen printing method, followed by drying andsintering to form the upper electrode 40 a.

[0312] Next, a ceramic element 100C according to the third embodimentwill be explained with reference to FIGS. 24 to 48.

[0313] The ceramic element 100C according to the third embodimentresides in the ceramic element comprising the anti-ferroelectric film 22formed on the vibrating section 18 as in the ceramic elements 100A, 100Baccording to the first and second embodiments described above, whereinthe shape memory effect is further enhanced in the ceramic element 100C.

[0314] In order to produce the ceramic element 100C according to thethird embodiment, the present inventors have confirmed the shape memoryeffect for a so-called bulk-type element 104 comprising electrodes 102a, 102 b formed on both surfaces of the anti-ferroelectric film 22 asshown in FIG. 25, the ceramic element 100A according to the firstembodiment comprising the pair of electrodes 24 a, 24 b formed on theanti-ferroelectric film 22 formed on the vibrating section 18 as shownin, for example, FIG. 1, and the ceramic element 100B according to thesecond embodiment comprising the lower electrode 40 b, theanti-ferroelectric film 22, and the upper electrode 40 a successivelystacked on the vibrating section 18 as shown in, for example, FIG. 14.

[0315] As a result, the following fact has been revealed. That is, thebending displacement is maintained in the bulk-type element 104 shown inFIG. 25 even when the applied voltage is lowered and the element is heldfor several seconds or more after the voltage to exceed the phasetransition electric field is applied. However, in the case of theceramic elements 100A, 100B described above, the bending displacement isdecreased during a holding period of several milliseconds or severaltens milliseconds, and the shape memory effect is obtained only for ashort period of time when the applied voltage is lowered after thevoltage to exceed the phase transition electric field is applied.Especially, it has been revealed that the decreasing rate of the bendingdisplacement is slightly larger in the ceramic element 100A according tothe first embodiment than in the ceramic element 100B according to thesecond embodiment.

[0316] It is assumed that such a result has been obtained due to thefollowing factor. That is, the residual stress is generated in theanti-ferroelectric film 22, and any harmful crystal strain is induced,due to the stress restriction exerted on the vibrating section 18 duringthe sintering process and the cooling process for the anti-ferroelectricfilm 22. Therefore, if such an element is applied to the display device20 as described later on, it is feared that the brightness may bedecreased, or any fluctuation in brightness may occur due to anyvariation of voltage when the driving operation is effected for adjacentpicture element.

[0317] Accordingly, the present inventors have investigated thefollowing five conditions in order to dissolve the inconvenience of theceramic element 100A according to the first embodiment described above:

[0318] (1) formation of an intermediate layer 106 (see FIG. 24);

[0319] (2) thin film formation for the substrate 10 and the vibratingsection 18;

[0320] (3) loaded sintering (hot press method, see FIG. 29);

[0321] (4) speculative compensation for the composition,post-compensation For the lead component, and pulverization of tinoxide; and

[0322] (5) suppression of the depression amount of the vibrating section18 after the sintering for the anti-ferroelectric film 22.

[0323] The ceramic element 100C according to the third embodimentsatisfies all of the five conditions described above (see FIG. 24). Theeffect and the effective range concerning the five conditions will beexplained in detail below.

[0324] At first, the displacement-retaining ratio is defined as follows.The displacement-retaining ratio represents a percentage of displacementobtained when a predetermined voltage is applied during voltage drop,after applying a certain peak voltage (for example, 130 V) to theanti-ferroelectric film 22 to allow it to perform bending displacement,and then lowering the applied voltage to measure the displacement at thepredetermined voltage (for example, 50 V), provided that thedisplacement amount at the peak voltage is 100%.

[0325] The displacement action is caused in response to the appliedvoltage as follows as shown, for example, in FIG. 47. That is, forexample, the displacement is made along a curve indicated by (1) fromthe initial value (0 V) to the positive peak voltage (130 V), and thedisplacement is made along a curve indicated by (2) from the positivepeak voltage to the initial value. The displacement is made along acurve indicated by (3) from the initial value to the negative peakvoltage (−130 V), and the displacement is made along a curve indicatedby (4) from the negative peak voltage to the initial value.

[0326] 1. Formation of Intermediate Layer 106 Between Vibrating Section18 and Anti-Ferroelectric Film 22

[0327] The formation of the intermediate layer 106 refers to theformation of a metal film layer (i.e., the intermediate layer 106)between the vibrating section 18 and the anti-ferroelectric film 22 ofthe ceramic element 100C comprising the pair of electrodes 24 a, 24 bformed on the upper surface of the anti-ferroelectric film 22, forexample, as shown in FIG. 24. The formation of the intermediate layer106 makes it possible to increase the displacement-retaining ratio to beabout 70%.

[0328] The reason of the successful increase is estimated as follows.That is, the stress to be generated in the anti-ferroelectric film 22 ismitigated owing to the stress restriction of the vibrating section 18during the sintering process and the cooling process for theanti-ferroelectric film 22, by allowing the metal film layer(intermediate layer 106) to intervene between the vibrating section 18and the anti-ferroelectric film 22, the metal film layer being soft athigh temperature.

[0329] Those preferably used as the material for the intermediate layer106 include Pt, Pd, and an alloy of the both. The thickness of theintermediate layer 106 is appropriately not less than 1 μm and not morethan 10 μm, and preferably not less than 2 μm and not more than 6 μm,because of the following reason.

[0330] That is, if the thickness is less than 1 μm, the effect of stressmitigation does not appear. If the thickness exceeds 10 μm, theintermediate layer 106 is peeled off from the vibrating section 18 dueto the sintering contraction during the sintering process for theintermediate layer 106.

[0331] An illustrative experiment (hereinafter referred to as “firstillustrative experiment” for convenience) will now be explained. In thefirst illustrative experiment, the way of change of thedisplacement-retaining ratio depending on the thickness of theintermediate layer 106 was confirmed on the basis of Example 1 toExample 3 and Comparative Example 1 to Comparative Example 3.

[0332] An intermediate layer 106 of Pt was formed in 4 μm in Example 1.An intermediate layer 106 of Pd was formed in 2 μm in Example 2. Anintermediate layer 106 of Pd was formed in 8 μm in Example 3. On theother hand, an intermediate layer 106 of Pt was formed in 15 μm inComparative Example 1. An intermediate layer 106 of Pt was formed in 0.5μm in Comparative Example 2. No intermediate layer 106 was formed inComparative Example 3.

[0333] Experimental results are shown in FIG. 26. In the case ofComparative Example 1 in which the intermediate layer 106 was 15 μm, themeasurement could not be performed due to peeling off of theintermediate layer. In the case of Comparative Example 2 in which theintermediate layer 106 was 0.5 μm, the displacement-retaining ratio wasdecreased to be about 58%. Further, in the case of Comparative Example 3which had no intermediate layer 106, the displacement-retaining ratiowas extremely low, i.e., 54%.

[0334] Therefore, according to the results, the thickness of theintermediate layer 106 is appropriately not less than 1 μm and not morethan 10 μm, and preferably not less than 2 μm and not more than 6 μm.

[0335] 2. Thin Film Formation for Substrate and Vibrating Section

[0336] The thickness of the vibrating section 18 is made thinner thanthe thickness of the anti-ferroelectric film 22, and the entirethickness of the substrate 10 is simultaneously made to be thin. Bydoing so, the stress restriction of the substrate 10 exerted on theanti-ferroelectric film 22 is decreased. Therefore, the effect isobtained in that the sintering performance is enhanced for theanti-ferroelectric film 22, and the stress is mitigated.

[0337] An illustrative experiment (hereinafter referred to as “secondillustrative experiment” for convenience) will now be explained. In thesecond illustrative experiment, the change of the displacement-retainingratio depending on the change of the thickness of the substrate 10 wasconfirmed on the basis of Example 4 to Example 7. Results are shown inFIG. 27. In the table shown in FIG. 7, numerical values depicted inparentheses concerning the thickness of the substrate 10 represent thethicknesses of the vibrating section 18, the spacer plate 10B, and thebase plate 10A in this order (see FIG. 24). In any of Example 4 toExample 7, the intermediate layer 106 was not provided. The loadedsintering, the speculative compensation for the powder, and thepost-compensation for the lead component were not performed. Thespecific surface area of SnO₂ was 13 m²/g.

[0338] According to the experimental results, it is understood that thedisplacement-retaining ratio is preferably increased by making thethickness of the vibrating section 18 to be thinner than the thicknessof the anti-ferroelectric film 22, and simultaneously making thethickness of the entire substrate 10 to be thin as a film.

[0339] As shown in FIG. 28, the embodiment described above isestablished when Ln<tv×15 is satisfied under the following condition.That is, concerning the shortest dimension m passing through the centerof the vibrating section 18, the boundary portion between the uppersurface of the fixed section 20 and the upper surface of the vibratingsection 18 is defined as “boundary point k”. It is assumed that thedistance from the boundary point k to the end of formation of theanti-ferroelectric film 22 is Ln (μm), and the thickness of thevibrating section 18 is tv (μm). On this assumption, the thickness tb ofthe substrate 10 is appropriately tb≦350 μm, preferably tb≦250 μm, morepreferably tb≦130 μm, and most preferably tb≦70 μm. On the other hand,if Ln≧tv×15 is satisfied, the thickness of the vibrating section 18 ispreferably 1 to 50 μm, and more preferably 3 to 20 μm. Further, theaverage thickness of the anti-ferroelectric film 22 is preferably 1 to10 μm, more preferably 3 to 50 μm, and most preferably 5 to 40 μm.

[0340] 3. Loaded Sintering (Hot Press Method)

[0341] In this method, as shown in FIG. 29, the anti-ferroelectric film22 is sintered and treated while applying a load (hot press load) P tothe anti-ferroelectric film 22 formed on the substrate 10. The term“sample 108” is hereinafter used, which is at the stage in which theanti-ferroelectric film 22 is formed by printing on the substrate 10.

[0342] A specified method is illustrated, for example, in FIG. 30A. Inthis method, for example, a pedestal 114 is installed in an electricfurnace 112 for performing sintering by applying the electric power to aheater 110. The sample 108 is placed on the pedestal 114 so that thebottom surface of the substrate 10 contacts with the upper surface ofthe pedestal 114. Sintering is performed in a state in which a weight116 is placed on the sample 108. Another method is shown in FIG. 330B.That is, the sample 108 is placed on the pedestal 114 installed in theelectric furnace 112 so that the upper surface of the anti-ferroelectricfilm 22 contacts with the upper surface of the pedestal 14. Sintering isperformed in a state in which the weight 116 is placed on the bottomsurface of the substrate 10.

[0343] The loaded sintering makes it possible to enhance the sinteringperformance for the anti-ferroelectric film 22 and obtain a more densefilm.

[0344] The hot press load P is preferably not less than 0.4 kg/cm².However, the load is in a degree in which the vibrating section 18 isnot destroyed, depending on the thickness of the vibrating section 18,because of the following reason. That is, if the load is too large, itis feared that the vibrating section 18 is cracked at the end s of thespacer plate 10B and the vibrating section 18 (see FIG. 29).

[0345] An illustrative experiment (hereinafter referred to as “thirdillustrative experiment” for convenience) will now be explained. In thethird illustrative experiment, the change of the degree of denseness ofthe anti-ferroelectric film 22 depending on the change of the hot pressload P was confirmed on the basis of Example 8 and Comparative Examples4 to 6. The degree of denseness of the film is represented by “degree ofdenseness=100%—surface porosity”.

[0346] Experimental results are shown in FIG. 31. According to theresults, the hot press load P is not less than 4 g/cm², and its upperlimit differs depending on the thickness of the vibrating section 18.Preferably, the load is in a degree in which the vibrating section 18 isnot destroyed.

[0347] 4. Speculative Compensation for Composition, Post-Compensationfor Lead Component and Pulverization of Tin Oxide Powder

[0348] a, Speculative Compensation for Composition

[0349] In order to form the anti-ferroelectric film 22, theanti-ferroelectric ceramic material powder is prepared. During thisprocess, the variation in composition, which is caused by the mutualdiffusion between the anti-ferroelectric film 22 and the vibratingsection 18 during sintering, is speculated. The powder composition ofthe anti-ferroelectric ceramic material is prepared by being deviatedfrom the optimum composition.

[0350] Specifically, zirconium diffuses and inflows from the vibratingsection 18 during the sintering for the anti-ferroelectric film 22, andtitanium diffuses and outflows from the anti-ferroelectric film 22 tothe vibrating section 18. Therefore, the amount of zirconium ispreviously decreased, and the amount of titanium is increasedbeforehand.

[0351] The amount of adjustment for each of the components also relatesto, for example, the sintering condition, the composition of thevibrating section 18, and the thickness of the anti-ferroelectric film22. Therefore, it is important to individually determine the optimumadjustment amount.

[0352] Next, the difference between the ordinary preparation method inwhich the speculative compensation is not performed and the concerningpreparation method in which the speculative compensation is performedwill be explained with reference to block diagrams illustrating thesteps shown in FIGS. 32 and 33.

[0353] As shown in FIG. 32, in the ordinary preparation method, thepowder of the anti-ferroelectric ceramic material is weighed inconformity with the optimum composition, and then the powder is mixed ina ball mill (50 hours). Subsequently, the mixed powder is calcined at1000° C. for 5 hours, followed by pulverization with a ball mill (10hours).

[0354] As shown in FIG. 33, in the preparation method in which thespeculative compensation is performed, the composition of the powder tobe weighed is slightly different. However, in an overall viewpoint, thesteps are approximately the same as those of the ordinary preparationmethod. In this case, ZrO₂ is weighed in an amount smaller than theoptimum composition of the sintered compact, and TiO₂ is weighed in anamount larger than the optimum composition of the sintered compact.

[0355] An illustrative experiment (hereinafter referred to as “fourthillustrative experiment” for convenience) will now be explained. In thefourth illustrative experiment, the way of the change of thedisplacement-retaining ratio depending on the speculative compensationamount was confirmed on the basis of Example 9-1, Example 9-2, Example10-1, Example 10-2, and Comparative Example 7. The speculativecompensation amount herein refers to the percentage for each of theamounts of ZrO₂ and TiO₂ to be added provided that each of theprescribed amounts is 100%.

[0356] Experimental results are shown in FIG. 34. According to theresults, the amount of ZrO₂ is appropriately 95 to 98% provided that theoptimum sintered compact composition is regarded as 100%, and/or theamount of TiO₂ is appropriately 102 to 104% provided that the optimumsintered compact composition is regarded as 100%.

[0357] b. Post-Compensation for Lead Component

[0358] The anti-ferroelectric film 22 is formed on the vibrating section18 by means of the screen printing method. When the printing material isprepared, especially when the anti-ferroelectric ceramic material powderis prepared, lead oxide is previously prepared in a composition which issmaller by 10%, and then the amount of shortage of 10% is mixed in aform of lead oxide. An obtained mixed material is used as the printingmaterial for forming the anti-ferroelectric film. In this case, thecoexistence of the lead oxide powder in a mixed manner improves thesintering performance for the anti-ferroelectric film 22.

[0359] In the post-compensation for the lead component, as shown in FIG.35, the powder of the anti-ferroelectric ceramic material except forlead oxide is weighed in conformity with the optimum composition. Onlylead oxide is 90% of the prescribed blending amount. Subsequently, thepowders are mixed with a ball mill (50 hours), and then the mixed powderis calcined at 1000° C. for 5 hours. After that, lead oxide is mixed inan amount of 10% of the prescribed blending amount, followed by mixingand pulverization with a ball mill (10 hours).

[0360] An illustrative experiment (hereinafter referred to as “fifthillustrative experiment” for convenience) will now be explained. In thefifth illustrative experiment, the way of the change of the degree ofdenseness of the film depending on the post-compensation amount for thelead component was confirmed on the basis of Example 11 to Example 13and Comparative Examples 10 and 11. The post-compensation amount for thelead component herein refers to the amount of post-compensation (wt %)with respect to 100% of the lead component.

[0361] Experimental results are shown in FIG. 36. According to theresults, the post-compensation amount for the lead component isappropriately not less than 3% and not more than 20%, and preferably notless than 5% and not more than 15%.

[0362] c. Speculative Compensation for Composition+Post-Compensation forLead Component

[0363] When the powder of the anti-ferroelectric ceramic material isprepared, the speculative compensation for the composition and thepost-compensation for the lead component are combined. Thus, thedisplacement-retaining ratio can be increased, and the degree ofdenseness of the anti-ferroelectric film 22 can be increased.

[0364] As shown in FIG. 37, in the preparation method based on thecombination, lead oxide is 90% of the prescribed blending amount at thestage of weighing. ZrO₂ is weighed in an amount smaller than theprescribed amount, and TiO₂ is weighed in an amount larger than theprescribed amount. Subsequently, the powders are mixed by using a ballmill (50 hours), and then the obtained mixed powder is calcined at 1000°C. for 5 hours. After that, lead oxide is mixed in an amount of 10% ofthe prescribed blending amount, followed by mixing and pulverizationwith a ball mill (10 hours).

[0365] d. Pulverization of Tin Oxide Powder

[0366] In order to improve the homogeneity and the bendingcharacteristic of the anti-ferroelectric film 22 on the vibratingsection 18, the specific surface area of the tin oxide (SnO₂) to be usedas the raw material is not less than 10 m²/g when the powder of theanti-ferroelectric ceramic material is prepared. The pulverization oftin oxide can be achieved by starting the weighing procedure after onlythe SnO₂ powder is previously pulverized.

[0367] An illustrative experiment (hereinafter referred to as “sixthillustrative experiment” for convenience) will now be explained. In thesixth illustrative experiment, the way of the change of the measurementresult of the hysteresis characteristic (voltage-strain characteristic)depending on the difference in specific surface area of SnO₂ wasconfirmed on the basis of Example 14 and Comparative Examples 12 and 13.

[0368] Experimental results are shown in FIG. 38. In Comparative Example12 in which the specific surface area was 5 m²/g, SnO₂ particlesremained. Therefore, the dispersion of the composition was large, and nodisplacement occurred. In Comparative Example 13 in which the specificsurface area was 22 m²/g, SnO₂ particles aggregated to one another.Therefore, the dispersion of the composition was large, and nodisplacement occurred. On the other hand, in Example 14 in which thespecific surface area was 13 m²/g, good hysteresis was successfullyobtained in the same manner as the characteristic shown in FIG. 48.

[0369] Therefore, the specific surface of SnO₂ is appropriately not lessthan 8 m²/g and not more than 20 m²/g.

[0370] 5. Suppression of Depression Amount of Vibrating Section AfterSintering for Anti-Ferroelectric Film

[0371] As shown in the condition (2) described above, when the thicknessof the anti-ferroelectric film 22 is made thicker than the thickness ofthe vibrating section 18, the sintering contraction force during thesintering for the anti-ferroelectric film 22 is increased. As shown inFIG. 39A, the flexural displacement in the downward direction of thevibrating section 18 is accelerated, and the depression amount of thevibrating section 18 is increased.

[0372] For example, when the thickness of the spacer plate 10B is 150μm, there is a possibility that the depression amount of the vibratingsection 18 is brought about up to 150 μm at the maximum. If thedepression amount of the vibrating section 18 is large, then the surfacein the vicinity of the center of the anti-ferroelectric film 22 isdepressed to be lower than the surface of the substrate 10, and it isfeared that the bending displacement to be given by the actuator element12 may be decreased.

[0373] Accordingly, as shown in FIG. 39B, the depth of the space justunder the vibrating section 18, i.e., the depth of the hollow space 14is made to be not more than 10 μm. By doing so, the depression amount ofthe vibrating section 18 can be suppressed to be not more than 10 μm.Thus, the surface in the vicinity of the center of theanti-ferroelectric film 22 is not depressed to be lower than the surfaceof the substrate 10. This is also a technique which makes it possible toeasily realize the condition shown in FIGS. 12A to 13. It is possible toreliably achieve the displacement of the actuator element 12 in thefirst direction.

[0374] Next, two types of production methods will be explained for theceramic element in which the depth of the hollow space 14 is 10 μm.

[0375] At first, in the first method, the substrate 10 can be integratedinto one unit by stacking formed layers as green sheets or green tapesby means of, for example, thermal adhesion under pressure, followed bysintering. For example, as shown in FIG. 40, three layers of greensheets or green tapes (a layer 120A to form the base plate 10A, a layer120B to form the spacer plate 10B, and a layer 120C to form the closingplate 10C) are stacked. Among them, a window 122 having a predeterminedshape to form the hollow space 14 thereafter is appropriately providedthrough the second layer (the layer 120B to form the spacer plate 10B)beforehand before stacking the layers.

[0376] Alternatively, a molded layer may be produced by means of, forexample, pressing, casting, or injection molding based on the use of amold so that the hollow space 14 (window 122) and other components maybe formed therein by means of mechanical processing such as cutting,cutting processing, laser processing, and punching by press processing.In this procedure, it is preferable that the thickness of the secondlayer 120B is 1 to 15 μm.

[0377] In the second method, at first, as shown in FIG. 41A, forexample, a paste 124, which is composed of the same material as that forthe green sheet or green tape 120A, is applied by the printing method toform a second layer (a layer 120B to form the spacer plate 10B) on thegreen sheet or green tape 120A to form the base plate 10A. The printingpattern used in this process has a shape in which a window 126 isprovided. After that, as shown in FIG. 41B, a third layer (a layer 120Cto form the closing plate 10C) is stacked on the entire surfaceincluding the second layer 120B, followed by sintering to successfullyform the substrate 10 integrated into one unit as shown in FIG. 41C. Inthis procedure, the hollow space 14 is formed at the portioncorresponding to the window 126, and thus the vibrating section 18 isformed. In this embodiment, it is also preferable that the thickness ofthe printing pattern for the second layer 120B (paste 124 in thisembodiment) is 1 to 15 μm.

[0378] An illustrative experiment (hereinafter referred to as “seventhillustrative experiment” for convenience) will now be explained. In theseventh illustrative experiment, the way of the change of the depressionamount δ of the vibrating section 18 after sintering for theanti-ferroelectric film 22 and the displacement upon application of thepeak voltage in an ordinary manner depending on the thicknesses of thesecond layer (the layer 120B to form the spacer plate 10B) and theanti-ferroelectric film 22 was confirmed on the basis of Examples 15 and16 and Comparative Examples 14 and 15.

[0379] As shown in FIG. 42, the depression amount δ of the vibratingsection 18 represents the amount of downward depression from the uppersurface of the substrate 10, of the portion corresponding to the centralportion of the hollow space 14, of the upper surface of the vibratingsection 18 after the sintering for the anti-ferroelectric film 22.

[0380] Experimental results are shown in FIG. 43. According to theexperimental results, the following fact is acknowledged. That is, whenthe thickness of the second layer 120B is thin, then the downwarddepression is suppressed, and the large displacement is obtained.However, when the thickness of the second layer 120B is thick, then thedepression is large, and the displacement is small.

[0381] The following method may be adopted in addition to the two typesof the production methods described above.

[0382] That is, an organic paste, which is thermally decomposed andgasified by being heated to several hundreds degrees centigrade, isprinted and applied in a pattern of the hollow space shape onto thefirst principal surface of a green sheet to form the base plate 10A.After that, a green sheet to form the closing plate 10C is stacked onthe surface, followed by sintering. Thus, the substrate 10 is obtained,in which the depth of the hollow space 14 is not more than 10 μm. Theanti-ferroelectric film 22 and the pair of electrodes 24 a, 24 b areformed on the substrate 10 as described above. Thus, it is possible toobtain the ceramic element in which the depth of the hollow space 14 isnot more than 10 μm. In this embodiment, for example, theobromine(C₇H₈N₄O₂) may be adopted as the organic paste.

[0383] Still another production method is available. That is, thesubstrate 10 in which the depth of the hollow space 14 is not more than10 μm is obtained by radiating a laser beam with a pattern of the hollowspace shape onto the first principal surface of a green sheet to formthe base plate 10A, decomposing and removing the surface layer, and thenstacking a green sheet to form the closing plate 10C onto the surfacethereof, followed by sintering. The anti-ferroelectric film 22 and thepair of electrodes 24 a, 24 b are formed on the substrate 10 asdescribed above. Thus, it is possible to obtain the ceramic element inwhich the depth of the hollow space 14 is not more than 10 μm. In thisembodiment, it is preferable to use, as the laser beam, an excimer lasercapable of directly decomposing the chemical bond of the organicsubstance in the green sheet composition, in view of the fact that theheat is not produced so much on the radiated surface, and it is possibleto suppress the deformation and the deterioration of the green sheetassociated therewith to the minimum, as compared with the CO₂ laser orthe like.

[0384] Next, explanation will be made on the basis of an illustrativeexperiment (hereinafter referred to as “eighth illustrative experiment”for convenience) with reference to FIG. 25 and FIGS. 44 to 48,concerning the hysteresis characteristic (voltage-bending displacementcharacteristic) and the difference in displacement-retaining ratiorespectively for Example 17 which resides in the same construction asthat of the ceramic element 100C according to the third embodiment andfor Comparative Example 16 in which a part of the five conditions arenot satisfied. Experimental results obtained in the eighth illustrativeexperiment are shown in FIG. 44.

[0385] At first, for the purpose of comparison, explanation will be madefor the production condition and the strain-measuring condition for thebulk-type element 104. As shown in FIG. 25, the bulk-type element 104was produced by molding a calcined powder of an anti-ferroelectric witha uniaxial press, followed by sintering to obtain a sintered productwhich was processed into 12×3×1 mm to form Ag electrodes 102 a, 102 b onboth principal surfaces. A strain gauge 118 was affixed to one of the Agelectrodes 102 a. A voltage e of ±4 kV at a frequency of 0.6 Hz wasapplied between the both electrodes 102 a, 102 b. The strain obtainedthereby was measured by the aid of lead wires 130 a, 130 b. Measurementresults are shown in FIG. 45. The bulk-type element 104 had adisplacement-retaining ratio of 100 to 107% (see FIG. 44).

[0386] Subsequently, the ceramic element concerning Example 17 wasproduced under the following condition. A Pt film having a thickness of4 μm was formed as the intermediate layer 106 to satisfy the conditionof (1) described above. In order to satisfy the conditions of (2) and(5) described above, the substrate 10 having a thickness of 50 μm wasused (thickness of the vibrating section 18: 10 μm, thickness of thespacer plate 10B: 10 μm, and thickness of the base plate 10A: 30 μm). Inorder to satisfy the condition of (3) described above, the hot pressload P was 0.6 kg/cm². In order to satisfy the condition of (4)described above, the composition of the anti-ferroelectric film 22before sintering (i.e., composition after printing) was determined bycombining the speculative compensation and the post-compensation for thelead component, and the SnO₂ powder had a specific surface area of 11m²/g.

[0387] A sine wave having a frequency of 1 kHz and peak values of ±130 V(see FIG. 46) was applied between the pair of electrodes 24 a, 24 b onthe anti-ferroelectric film 22. The displacement amount obtained therebywas continuously measured by using a laser displacement meter. As aresult, for example, a characteristic curve as shown in FIG. 47 wasobtained. The following fact is acknowledged in Example 17. That is,according to a displacement λpe at the peak voltage (130 V) and adisplacement λce at the predetermined voltage (50 V) during voltagedrop, the displacement-retaining ratio is 81 to 95% (see FIG. 44). Thus,the shape memory effect is sufficiently exhibited.

[0388] On the other hand, the ceramic element concerning ComparativeExample 16 was produced under the following condition. The intermediatelayer 106 was not formed. The substrate 10 having a thickness of 310 μmwas used (thickness of the vibrating section 18: 10 μm, thickness of thespacer plate 10B: 150 μm, and thickness of the base plate 10A: 150 μm).The loaded sintering was not performed. Neither the speculativecompensation nor the post-compensation for the lead component wasperformed for the composition of the anti-ferroelectric film 22 beforesintering (i.e., composition after printing). However, the SnO₂ powderhad a specific surface area of 13 m²/g, because of the following reason.That is, if the specific surface area of the SnO₂ powder is less than 8m²/g or more than 20 m²/g, the anti-ferroelectric property is notexhibited. Therefore, the specific surface area of the SnO₂ powder waswithin the specified composition range concerning the condition of (4)described above.

[0389] A sine wave having a frequency of 1 kHz and peak values of ±130 V(see FIG. 46) was applied between the pair of electrodes 24 a, 24 b onthe anti-ferroelectric film 22. The displacement amount obtained therebywas continuously measured by using a laser displacement meter. As aresult, a characteristic curve as shown in FIG. 48 was obtained. Thefollowing fact is acknowledged in Comparative Example 16. That is,according to a displacement λpc at the peak voltage (130 V) and adisplacement λcc at the predetermined voltage (50 V) during voltagedrop, the displacement-retaining ratio is 50 to 54% (see FIG. 44).Therefore, the shape memory effect is not sufficient.

[0390] The ceramic element 100C according to the third embodimentdescribed above satisfies all of the five conditions described above inorder to obtain the high displacement-retaining ratio. However, when itis intended to satisfy the displacement-retaining ratio of not less thanabout 70%, it is unnecessary to satisfy all of the five conditions. Thepresent invention may be carried out by appropriately selecting theconditions.

Applied Embodiments

[0391] Applied Embodiment 1

[0392] Next, a display device 200 concerning an applied embodiment willbe explained with reference to FIGS. 49 to 52. The display device 200concerning this applied embodiment is obtained by applying the ceramicelement 100A according to the first embodiment (analog displacement typeand digital displacement type) to the display device 200. Therefore,components or parts corresponding to those shown in FIG. 1 aredesignated by the same reference numerals, duplicate explanation ofwhich will be omitted.

[0393] As shown in FIG. 49, the display device 200 concerning thisapplied embodiment comprises an optical waveguide plate 52 forintroducing light 50 thereinto, and a driving unit 54 providedopposingly to the back surface of the optical waveguide plate 52 andincluding a large number of actuator elements 12 arranged correspondingto picture elements.

[0394] The driving unit 54 has a substrate 10 composed of, for example,a ceramic, and the actuator elements 12 are arranged at positions on thesubstrate 10 corresponding to the respective picture elements. Thesubstrate 10 is disposed so that its first principal surface is opposedto the back surface of the optical waveguide plate 52. The firstprincipal surface is a continuous surface (flushed surface). Hollowspaces 14 are provided at positions corresponding to the respectivepicture elements.

[0395] A displacement-transmitting section 56 is connected onto each ofthe actuator elements 12, for increasing the contact area with respectto the optical waveguide plate 52 to provide an area corresponding tothe picture element. The displacement-transmitting section 56 comprisesa plate member 56 a for specifying a substantial light emission area,and a displacement-transmitting member 56 b for transmitting thedisplacement of the actuator element 12 to the plate member 56 a.

[0396] The displacement-transmitting member 56 b of thedisplacement-transmitting section 56 preferably has a hardness in adegree to directly transmit the displacement of the actuator element 12to the optical waveguide plate 52. Therefore, those preferably used asmaterials for the displacement-transmitting member 56 b include, forexample, rubber, organic resins, organic adhesive films, and glass.However, it is allowable to use the electrode layer itself, or materialssuch as the piezoelectric materials and the ceramics described above.Those most preferably used include, for example, organic resins andorganic adhesive films based on epoxy compounds, acrylic compounds,silicone compounds, and polyolefin compounds. Further, it is alsoeffective to mix a filler with the foregoing compounds to suppresscontraction upon curing.

[0397] Those desirably used as materials for the plate member 56 ainclude the materials for the displacement-transmitting member 56 bdescribed above, as well as materials obtained by finely dispersingceramic powder having a high refractive index, such as zirconia powder,titania powders lead oxide powder, and mixed powder thereof, in anorganic resin based on an epoxy, acrylic, or silicone compound, fromviewpoints of light emission efficiency and maintenance of flatness. Inthis case, it is preferable to select a ratio of resin weight:ceramicpowder weight=1:(0.1 to 10). Further, it is preferable to add, to theforegoing composition, glass powder having an average particle diameterof 0.5 to 10 μm in a ratio of 1:(0.1 to 1.0) with respect to the ceramicpowder, because release property and contact property with respect tothe surface of the optical waveguide plate 52 are improved.

[0398] Preferably, the flatness or the smoothness of the portion(surface) of the plate member 56 a to contact with the optical waveguideplate 52 is sufficiently small as compared with the displacement amountof the actuator element 12, which is specifically not more than 1 μm,more preferably not more than 0.5 μm, and especially preferably not morethan 0.1 μm. However, the flatness of the portion (surface) of thedisplacement-transmitting section 56 to contact with the opticalwaveguide plate 52 is important in order to reduce the clearancegenerated when the displacement-transmitting section 56 contacts withthe optical waveguide plate 52. Accordingly, there is no limitation tothe foregoing flatness range, provided that the contact portion makesdeformation in a state of contact.

[0399] When the material described above is used for thedisplacement-transmitting section 56, the displacement-transmittingsection 56 may be connected to the main actuator element 26 by stackingthe displacement-transmitting section 56 composed of the foregoingmaterial by using an adhesive, or by forming thedisplacement-transmitting section 56 on the upper portion of the mainactuator element 26 or on the optical waveguide plate 52, in accordancewith, for example, a method for coating a solution, a paste, or a slurrycomposed of the material described above.

[0400] When the displacement-transmitting section 56 is connected to themain actuator element 26, it is preferable to use a material which alsoserves as an adhesive for the material for the displacement-transmittingsection 56. Especially, when an organic adhesive film is adopted, it canbe used as an adhesive by applying heat, which is preferred.

[0401] The optical waveguide plate 52 has an optical refractive index sothat the light 50 introduced into the inside is subjected to totalreflection without being transmitted to the outside of the opticalwaveguide plate 52 through the front and back surfaces. It is necessaryfor the optical waveguide plate 52 to use those having a uniform andhigh transmittance in the wavelength region of visible light. Thematerial for the optical waveguide plate 52 is not especially limitedprovided that it satisfies the foregoing characteristic. However,specifically, those generally used for the optical waveguide plate 52include, for example, glass, quartz, light-transmissive plastics such asacrylic plastics, light-transmissive ceramics, structural materialscomprising a plurality of layers composed of materials having differentrefractive indexes, and those having a surface coating layer.

[0402] As shown in FIG. 50, the wiring arrangement communicating withthe respective electrodes 24 a, 24 b includes vertical selection lines58 having a number corresponding to a number of rows of a large numberof the picture elements, and signal lines 60 having a numbercorresponding to a number of columns of the large number of the pictureelements. Each of the vertical selection lines 58 is electricallyconnected to the first electrode 24 a of each of the picture elements(actuator elements) 12. Each of the signal lines 60 is electricallyconnected to the second electrode 24 b of each of the picture elements12.

[0403] The respective vertical selection lines 58, which are included inone row, are wired in series such that the wiring is led from the firstelectrode 24 a provided for the picture element 12 in the previouscolumn, and then the wiring is connected to the first electrode 24 aprovided for the picture element 12 in the present column. The signalline 60 comprises a main line 60 a extending in the direction of thecolumn, and branch lines 60 b branched from the main line 60 a andconnected to the second electrode 24 b of each of the picture elements12.

[0404] The voltage signal is supplied to the respective verticalselection lines 58 from the second principal surface of the substrate 10via through-holes 62. The voltage signal is also supplied to therespective signal lines 60 from the second principal surface of thesubstrate 10 via through-holes 64.

[0405] Various arrangement patterns may be assumed for the through-holes62, 64. However, in the illustrative arrangement shown in FIG. 50, thethrough-holes 62 for the vertical selection lines 58 are formed asfollows provided that the number of rows is M, and the number of columnsis N. In the case of N=M or N>M, the through-hole 62 is formed in thevicinity of a picture element in the nth row and nth column (n=1, 2 . .. ) and at a position deviated toward the signal line (main line) in the(n−1)th column. In the case of N<M, the through-hole 62 is formed in thevicinity of a picture element in the (αN+n)th row and nth column (α=0, 1. . . (quotient of M/N−1)) and at a position deviated toward the signalline (main line) in the (n−1)th column.

[0406] The through-hole 62 for the vertical selection line 58 is notformed on the vertical selection line 58, unlike the through-hole 64 forthe signal line 60. Accordingly, a mediating conductor 66 is formedbetween the through-hole 62 and the first electrode 24 a, for makingelectric continuity therebetween.

[0407] Insulative films 68 (shown by two-dot chain lines), each of whichis composed of, for example, a silicon oxide film, a glass film, or aresin film, are allowed to intervene at portions of intersection betweenthe respective vertical selection lines 58 and the respective signallines 60, in order to ensure insulation between the mutual wiringarrangements 58, 60.

[0408] The display device 200 concerning this applied embodiment isoperated such that the three basic operations (ON selection, OFFselection, and NO selection) are effected on the picture elements 12 todisplay a picture.

[0409] Specifically, a group of the picture elements included in onerow, for example, those included in 1st row, 2nd row, . . . nth row aresuccessively selected for every one horizontal scanning term inaccordance with electric potential supply to the vertical selectionlines 58 by using, for example, a vertical shift circuit composed of ashift register, on the basis of input of an image signal into thedisplay device 200. An electric potential is supplied to the signal line60 corresponding to the picture element 12 which is included in theselected row and which should be subjected to ON selection, at apredetermined selected point of time, for example, from a horizontalshift circuit composed of a shift register. As a result, a predeterminedvoltage, which is sufficient to cause the phase transition in theanti-ferroelectric film 22, is applied to the picture element 12subjected to the ON selection by the vertical shift circuit and thehorizontal shift circuit. At this time, the actuator element 12concerning the picture element makes displacement in a convexconfiguration. In view of the display device, this state is the ONselection state. In the ON selection state, thedisplacement-transmitting section 56 is displaced toward the opticalwaveguide plate 52 in accordance with the convex deformation of theactuator element 12, and the displacement-transmitting section 56contacts with the optical waveguide plate 52.

[0410] The displacement-transmitting section 56 contacts with the backsurface of the optical waveguide plate 52 in response to thedisplacement of the actuator element 12. When thedisplacement-transmitting section 56 contacts with the back surface ofthe optical waveguide plate 52, for example, the light 50, which hasbeen subjected to total reflection in the optical waveguide plate 52, istransmitted through the back surface of the optical waveguide plate 52,and the light 50 is transmitted to the surface of thedisplacement-transmitting section 56. The light 50 is scattered andreflected by the surface of the displacement-transmitting section 56.

[0411] The displacement-transmitting section 56 is provided in order toscatter and reflect the light having been transmitted through the backsurface of the optical waveguide plate 52, and in order to increase thearea to contact with the optical waveguide plate 52 to be not less thana predetermined area. That is, the light emission area is specified bythe contact area between the displacement-transmitting section 56 andthe optical waveguide plate 52.

[0412] The contact between the displacement-transmitting section 56 andthe optical waveguide plate 52 means that the displacement-transmittingsection 56 and the optical waveguide plate 52 are positioned with adistance intervening therebetween, if any, the distance being not morethan a wavelength of the light 50 (light introduced into the opticalwaveguide plate 52).

[0413] On the other hand, the picture element 12, which is included inthe-group of the picture elements concerning the row selected by thevertical shift circuit and which is not subjected to ON selection, i.e.,which should be subjected to OFF selection, is operated as follows. Thatis, the electric potential of the signal line 60 concerning the pictureelement 12 is made to be an electric potential which is different fromthe electric potential for ON selection, at the predetermined selectionpoint of time. In this case, there is given a voltage (reverse biasvoltage) sufficient to restore the convex displacement of the actuatorelement 12 to the original state. At this time, the actuator element 12corresponding to the concerning picture element is restored to theoriginal state. This state is the OFF selection state in view of thedisplay device 200. In the OFF selection state, thedisplacement-transmitting section 56 is separated from the opticalwaveguide plate 52 in accordance with the displacement action of theactuator element 12.

[0414] All of the picture element groups concerning the rows notselected by the vertical shift circuit are in the NO selection state. Inthis case, the voltage application to the pair of electrodes 24 a, 24 bis stopped.

[0415] Next, the operation of the display device 200 according to theapplied embodiment of the present invention will be explained withreference to FIG. 49. At first, the light 50 is introduced, for example,from the end of the optical waveguide plate 52. In this embodiment, allof the light 50 is subjected to total reflection at the inside of theoptical waveguide plate 52 without being transmitted through the frontand back surfaces of the optical waveguide plate 52 by controlling themagnitude of the refractive index of the optical waveguide plate 52. Inthis state, when a certain actuator element 12 is allowed to be in theexcited state, and the displacement-transmitting section 56corresponding to the actuator element 12 contacts with the back surfaceof the optical waveguide plate 52 with a distance of not more than thewavelength of the light, then the light 50, which has been subjected tototal reflection, is transmitted to the surface of thedisplacement-transmitting section 56 which contacts with the backsurface of the optical waveguide plate 52.

[0416] The light 50, which has once arrived at the surface of thedisplacement-transmitting section 56, is reflected by the surface of thedisplacement-transmitting section 56, and it behaves as scattered light70. A part of the scattered light 70 is reflected again in the opticalwaveguide plate 52. However, the greater part of the scattered light 70is transmitted through the front surface of the optical waveguide plate52 without being reflected by the optical waveguide plate 52.

[0417] That is, the presence or absence of emission of light (leakagelight) from the front surface of the optical waveguide plate 52 can becontrolled in accordance with the presence or absence of the contact ofthe displacement-transmitting section 56 disposed at the back of theoptical waveguide plate 52. Especially, in the display device 200according to the applied embodiment of the present invention, one unitfor making the displacement movement of the displacement-transmittingsection 56 in the direction to make contact or separation with respectto the optical waveguide plate 52 is used as one picture element.Further, a large number of the picture elements 12 are arranged in amatrix form or in a zigzag configuration concerning the respective rows.Accordingly, when the displacement movement of each of the pictureelements 12 is controlled in accordance with an attribute of an inputtedimage signal, a picture (for example, characters and graphics) can bedisplayed on the front surface of the optical waveguide plate 52 inresponse to the image signal, in the same manner as the cathode-ray tubeand the liquid crystal display device.

[0418] As described above, in the display device 200 according to theapplied embodiment of the present invention, the main actuator element26 for selectively displacing the displacement-transmitting section 56comprises the anti-ferroelectric film 22, and the pair of electrodes 24a, 24 b formed on the anti-ferroelectric film 22. In this arrangement,when the predetermined voltage is applied to the pair of electrodes 24a, 24 b, the electric field is generated in the main actuator element 26in response to the applied voltage. The generated electric field allowsthe anti-ferroelectric film 22 to make displacement, for example, in thefirst direction. The displacement of the anti-ferroelectric film 22 inthe first direction causes the displacement-transmitting section 56 tomake displacement toward the optical waveguide plate 52. Thus, thegeneration of leakage light from the optical waveguide plate 52 isinduced as described above.

[0419] Especially, as described above, once the displacement occurs, theanti-ferroelectric film 22 maintains the displacement even when the novoltage-loaded state is given. Therefore, when the voltage is applied tothe necessary picture element to display an image, and the main actuatorelement 26 concerning the necessary picture element 12 is displaced,then the displacement is maintained over the period until thedisplacement is counteracted even when the voltage application to thepair of electrodes 24 a, 24 b concerning the necessary picture element12 is stopped. Thus, the light emission for the necessary pictureelement 12 is continued.

[0420] The difference in light-emitting operation between the displaydevice 200 concerning the applied embodiment of the present inventionand the display device concerning a comparative example will now beexplained with reference to FIGS. 51A and 51B. The display deviceconcerning the comparative example is based on the use of thepiezoelectric/electrostrictive film 36 (see FIG. 10A) in place of theanti-ferroelectric film 22 of the display device 200 concerning theapplied embodiment of the present invention.

[0421] In the display device concerning the comparative example, thepredetermined voltage is applied to the pair of electrodes 24 a, 24 b inrelation to the selected row (the row selected by the vertical shiftcircuit). Therefore, the picture element 12 subjected to the ONselection causes light emission. However, the voltage application is inthe stopped state for the picture elements 12 concerning the rows otherthan the selected row, i.e., the picture elements 12 concerning thenon-selected rows. Therefore, the displacement of all of the actuatorelements 12 of the picture element group concerning the non-selectedrows is restored to the original state, and hence the light emissionstate upon the selection is not maintained. This situation is shown inFIG. 51B. FIG. 51B shows a state in which all of the picture elements 12concerning the non-selected rows are in the light off state, and onlythe picture elements 12 subjected to ON selection on the selected rowmake light emission.

[0422] On the other hand, in the display device 200 concerning theapplied embodiment of the present invention, the predetermined voltageis applied to the pair of electrodes 24 a, 24 b concerning thoseincluded in the selected row. Therefore, the picture element 12subjected to the ON selection makes light emission, and the pictureelement 12 subjected to the OFF selection are turned off. The lightemission state is maintained as it is owing to the “effect to store thestrain state of the ferroelectric phase (shape memory effect)” of theanti-ferroelectric film 22 even when the voltage application to the pairof electrodes 24 a, 24 b is stopped. This situation is shown in FIG.51A. In FIG. 51A, the light emission state corresponding to the imagesignal concerning the present horizontal scanning line is given for theselected row. The light emission state selected just before ismaintained for rows disposed over the selected row, and the lightemission state given in the previous field period (or the previous frameperiod) is maintained for rows disposed under the selected row.

[0423] That is, in the case of individual formation of the signal wiringand the common wiring, the predetermined voltage may be applied for ashorter period of time with respect to the period of time during whichthe displacement of the actuator element 12 is intended to bemaintained. Therefore, it is possible to save the electric power ascompared with the display device concerning the comparative examplebased on the use of the piezoelectric/electrostrictive film 36.

[0424] Further, in the case of formation of the vertical selection line58 and the signal line 60, if the piezoelectric/electrostrictive film 36is used as in the display device concerning the comparative example,only the actuator elements 12 in the selected row, of all of theactuator elements 12 can be simultaneously displaced in all cases.However, in the display device 200 concerning the applied embodiment ofthe present invention, the actuator elements 12 in the selected rowmaintain the displacement even at the timing for selecting the next row.Therefore, at the point of time at which all of the rows are completelyselected, all of the actuator elements 12 in all of the rows can besimultaneously maintained for their displacement at the maximum.

[0425] In the case of a system which is capable of displaying acomplicated image, the system necessarily includes a large number ofpicture elements, in accordance with which it is necessary for thesystem to form the vertical selection lines 58 and the signal lines 60.However, in the case of the display device concerning the comparativeexample based on the use of the piezoelectric/electrostrictive film 36,only the actuator elements 12 in the selected row, of all of theactuator elements 12 can be simultaneously displaced in all cases, andonly the picture elements in the selected row can be subjected to lightemission. However, in the case of the display device 200 concerning theapplied embodiment of the present invention, the actuator elements 12 inthe selected row maintain the displacement even at the timing forselecting the next row. Therefore, at the point of time at which all ofthe rows are completely selected, all of the actuator elements 12 in allof the rows can be simultaneously maintained for their displacement, andit is possible to cause light emission for all of the picture elementsat the maximum. Thus, it is possible to increase the light emissionamount within a certain period of time in a degree of several times orseveral tens times or more.

[0426] In view of the fact described above, when the picture elementsare subjected to display in conformity with, for example, the horizontalscanning line for image display, the voltage may be applied to only thecolumn of picture elements (group of picture elements) corresponding tothe horizontal scanning line. Therefore, it is unnecessary to considerany voltage application to the other columns of picture elements (groupof picture elements). As a result, when the driving electric wiring isarranged, it is unnecessary to make individual wiring for the pictureelements one by one, making it possible to realize simplified electricwiring. This results in reduction of the load on the driving voltagesupply system. Thus, it is possible to simplify the mechanical structureand the circuit system and reduce the production cost.

[0427] Especially, as shown in FIG. 52, when the ceramic element 100Caccording to the third embodiment (see FIG. 24) is applied to constructa display device 200 a, the displacement-retaining ratio of the actuatorelement 12 is high. Therefore, for example, the brightness is notlowered, and the fluctuation of brightness does not occur, which wouldbe otherwise caused by fluctuation of voltage during the drivingoperation for adjacent picture elements. Thus, a high quality image canbe displayed.

[0428] Applied Embodiment 2

[0429] Next, explanation will be made with reference to FIGS. 53 to 55Bfor a relay device 210 concerning an applied embodiment in which theceramic element 100A according to the first embodiment (see FIG. 1) isapplied to the relay device. Components or parts corresponding to thoseshown in FIG. 1 are designated by the same reference numerals,duplicated explanation of which will be omitted.

[0430] As shown in FIG. 53, the relay device according to this appliedembodiment comprises an opposing terminal plate 80 for applying, forexample, the ground electric potential Vss thereto, and a driving unit82 provided opposingly to the back surface of the opposing terminalplate 80 and including a large number of actuator elements 12 arrangedas switching elements, for example, in one row.

[0431] The driving unit 82 has a substrate 10 composed of, for example,a ceramic. The actuator elements 12 are arranged at positions on thesubstrate 10 corresponding to the respective switching elements. Thesubstrate 10 is disposed so that its first principal surface is opposedto the back surface of the opposing terminal plate 82. The firstprincipal surface is a continuous surface (flushed surface). Hollowspaces 14 are provided at positions corresponding to the respectiveswitching elements (actuator elements) 12.

[0432] A thin insulating sheet (insulating film) 84 is arranged on theentire surfaces of the respective actuator elements 12. A substrate 86provided with signal terminals is arranged between the insulating sheet84 and the opposing terminal plate 80. In FIGS. 53 to 55B, the pair ofelectrodes 24 a, 24 b (upper and lower electrodes 40 a, 40 b) areomitted from illustration in order to avoid complicated illustration.

[0433] The substrate 86 provided with signal terminals is constructed bysticking a thin metal plate 92, for example, with an adhesive to oneplate surface (plate surface facing the driving unit 82) of aninsulating substrate 90 formed with a large number of openings 88. Themetal plate 92 has a large number of openings 94 which are formed atpositions corresponding to the large number of openings 88 formedthrough the insulating substrate 90 and which have the same aperturewidth as that of the openings 88. An extremely thin plate spring 96 madeof metal, which is composed of, for example, beryllium copper, isprovided to close the openings 94. The plate spring 96 has across-sectional configuration in which the central portion protrudes inthe first direction (direction to face the opposing terminal plate 80).In this embodiment, the openings 98 of the substrate 86 with signalterminals are formed by the openings 88 of the insulating substrate 90and the openings 94 of the metal plate 92 of the substrate 86 withsignal terminals. The signal terminal section is constructed by themetal plate 92 and the plate spring 96.

[0434] A side wall 99, which is composed of, for example, a ceramicmember having approximately the same height as the thickness of the mainactuator element 26, is secured to the circumference of the substrate 10which is a constitutive component of the driving unit 82.

[0435] The relay device 210 concerning the applied embodiment of thepresent invention is produced as follows. The insulating sheet 84 issecured onto the driving unit 82 by using, for example, an adhesive.During this process, the insulating sheet 84 is glued onto the uppersurface of the side wall 99 of the substrate 10 and onto the uppersurfaces of the respective actuator elements 26. Subsequently, thesubstrate 86 with signal terminals is stuck and secured onto theinsulating sheet 84, for example, with an adhesive. During this stickingprocess, the surface of the substrate 86 with signal terminals on theside of the metal plate 92 is opposed and stuck to the insulating sheet84. At this time, the protruding portion 96 a of the plate spring 96 isinserted into the opening 98 of the substrate 86 with signal terminalstoward the opposing terminal plate 80. After that, the opposing terminalplate 80 is stuck and secured onto the insulating substrate 90 of thesubstrate 86 with signal terminals by using, for example, an adhesive.At this stage, the relay device 210 concerning the applied embodiment ofthe present invention shown in FIG. 54 is completed.

[0436] The protruding amount of the plate spring 96 in the opening 98 isset as follows. At first, as shown in FIG. 55A, the protruding amount isin a degree in which the upper end of the protruding portion 96 a of theplate spring 96 does not contact with the opposing terminal plate 80 ina state in which the anti-ferroelectric film 22 of the main actuatorelement 26 is not displaced in the first direction (in the direction forthe main actuator element 26 to face the opposing terminal plate 80). Asshown in FIG. 55B, the protruding amount is in a degree in which theupper end of the protruding portion 96 a of the plate spring 96 contactswith the opposing terminal plate 80 in a state in which theanti-ferroelectric film 22 is displaced in the first direction (in anamount of displacement of about 5 μm in this embodiment).

[0437] When the plate springs 96 corresponding to a part of switchingelements 12 of the large number of switching elements (actuator elements12) contact with the opposing terminal plate 80, the plate springs 96are electrically connected to the opposing terminal plate 80. The signalflows between the plate springs 90 and the opposing terminal plate 80.Thus, for example, the ON operation is performed.

[0438] As described above, in the relay device 210 concerning theapplied embodiment according to the present invention, the ON/OFFoperation of the large number of switching elements 12 can be controlledin accordance with the presence or absence of the contact of the platesprings 96 disposed at the back of the opposing terminal plate 80. Inthis embodiment, one unit for making the displacement movement of theplate spring 96 in the direction to make contact or separation withrespect to the opposing terminal plate 80 is considered as one switchingelement 12. Further, the switching elements 12 are arranged, forexample, in one array or in a matrix form. In this arrangement, when thedisplacement movement of each of the switching elements 12 is controlledin accordance with an attribute of an inputted switching signal, it ispossible to provide a large number of combinations of switching forms.Thus, it is possible to realize a variety of switching operations.

[0439] In the relay device 210 concerning the applied embodiment of thepresent invention, the main actuator element 26 for selectivelydisplacing the plate spring 96 comprises the anti-ferroelectric film 22,and the pair of electrodes 24 a, 24 b (upper and lower electrodes 40 a,40 b) formed on the anti-ferroelectric film 22. In this arrangement,when the predetermined voltage is applied to the pair of electrodes 24a, 24 b, the electric field is generated in the main actuator element 26in response to the applied voltage. The generated electric field allowsthe anti-ferroelectric film 22 to make displacement, for example, in thefirst direction. The displacement of the anti-ferroelectric film 22 inthe first direction causes the plate spring 96 to make displacementtoward the opposing terminal plate 80. Thus, the ON operation of theswitching element 12 is induced as described above.

[0440] Especially, as described above, once the displacement occurs, theanti-ferroelectric film 22 maintains the displacement even when the novoltage-loaded state is given. Therefore, when the voltage is applied tothe necessary switching element 12 to perform the switching operation,and the main actuator element 26 concerning the necessary switchingelement 12 is displaced, then the displacement is maintained over theperiod until the displacement is counteracted even when the voltageapplication to the pair of electrodes 24 a, 24 b (upper and lowerelectrodes 40 a, 40 b) concerning the necessary switching element 12 isstopped. Thus, the ON operation of the necessary switching element 12 iscontinued. Therefore, the electric power consumption is greatly reduced,and it is possible to realize reduction of the running cost.

[0441] When the switching operation is performed while specifying therow and the column, the voltage may be applied to only the switchingelement column corresponding to the concerning row. It is unnecessary toconsider any voltage application to the other switching element columns.Accordingly, when the electric wiring is arranged for driving thedevice, it is unnecessary to make individual wiring for the elements oneby one, making it possible to realize simplified electric wiring. Thisresults in reduction of the load on the driving voltage supply system.Thus, it is possible to simplify the mechanical structure and thecircuit system and reduce the production cost.

[0442] That is, the relay device 210 makes it possible to achieve ahighly integrated circuit of 1 millipitch, as compared with theconventional relay device based on the magnet system. Moreover, thecontact state can be maintained even when the control voltage is notalways applied. Thus, the provided relay device 210 contributes to theelectric power saving.

[0443] Applied Embodiment 3

[0444] Next, a capacitance-variable capacitor 220 concerning an appliedembodiment will be explained with reference to FIGS. 56A to 58. Thecapacitance-variable capacitor concerning this applied embodiment isconstructed by applying, to the capacitance-variable capacitor, theceramic element 100A (especially the analog displacement type) accordingto the first embodiment or the ceramic element 100B (especially thefirst analog displacement type) according to the second embodiment.Therefore, the two types of the capacitance-variable capacitors arereferred to as the capacitance-variable capacitor 220A concerning thefirst applied embodiment and the capacitance-variable capacitor 220Bconcerning the second applied embodiment respectively. Components orparts corresponding to those shown in FIG. 1 and FIG. 15A are designatedby the same reference numerals, duplicate explanation of which will beomitted.

[0445] Each of the capacitance-variable capacitors 220A, 220B concerningthe applied embodiments comprises control electrodes for varying thecapacitance C of the capacitor, and both terminal electrodes of thecapacitor. The principle of the variable capacitance C of the capacitoris as follows. At first, the dielectric constant of the phase transitionregion Zt in the anti-ferroelectric film 22 is higher than thedielectric constant of regions in which no phase transition occurs.Therefore, the capacitance C of the capacitor can be made to be variableby changing the voltage applied to the control electrodes to change therange of the phase transition region Zt generated in theanti-ferroelectric film 22.

[0446] Based on this knowledge, at first, as shown in FIG. 56A, thecapacitance-variable capacitor 220A concerning the first appliedembodiment is obtained by applying the ceramic element 100A according tothe first embodiment. A capacitor unit 80 is arranged at a predeterminedposition of the substrate 10 composed of, for example, ceramic.

[0447] As shown in FIG. 56A, the capacitor unit 80 comprises thevibrating section 18 and the fixed section 20 described above, as wellas the anti-ferroelectric film 22 formed on the vibrating section 18, apair of control electrodes (first control electrode 24 a and secondcontrol electrode 24 b) formed on the upper surface of theanti-ferroelectric film 22, and both terminal electrodes (upperelectrode 40 a and lower electrode 40 b) formed on the upper and lowersurfaces of the anti-ferroelectric film 22 respectively.

[0448] Next, the operation principle of the capacitance-variablecapacitor 220A concerning the first applied embodiment will be explainedwith reference to FIGS. 56A to 57B.

[0449] At first, as shown in FIG. 56A, when the first control electrode24 a and the second control electrode 24 b are allowed to have, forexample, the ground electric potential respectively to make the appliedvoltage between the pair of control electrodes 24 a, 24 b to be zero, noelectric field is generated in the capacitor unit 80. Therefore, thecapacitance C, which appears between the both terminal electrodes 40 a,40 b, is determined by the dielectric constant originally possessed bythe anti-ferroelectric film 22. Thus, the initial capacitance value COis given.

[0450] Next, observation is made for the case in which the voltage value(level) of the voltage V applied to the pair of control electrodes 24 a,24 b is gradually increased to be V1, V2, and V3. At first, as shown inFIG. 56B, when there is given the applied voltage V=V1 (>0V), i.e., whenthe applied voltage V is the voltage V1 which is smaller than thepredetermined voltage Vd, then the electric field generated in thecapacitor unit 80 is weak. Therefore, no phase transition occurs in theanti-ferroelectric film 22. Accordingly, the capacitance C, whichappears between the both terminal electrodes 40 a, 40 b, is determinedby the dielectric constant originally possessed by theanti-ferroelectric film 22. Thus, the initial capacitance value CO isalso given in this case.

[0451] As shown in FIG. 57A, the electric field intensity is sufficientto cause the phase transition in a region in which the distance betweenthe pair of control electrodes 24 a, 24 b is shortest and in a regionwhich is nearest to the pair of control electrodes 24 a, 24 b, at andafter the stage in which the applied voltage V exceeds the predeterminedvoltage Vd. The phase transition occurs in such regions (occurrence ofthe phase transition region Zt). The dielectric constant of theanti-ferroelectric film 22 is increased in accordance with the phasetransition. The capacitance C, which appears between the both terminalelectrodes 40 a, 40 b, has a capacitance value C1 which is higher thanthe initial capacitance value CO.

[0452] As shown in FIG. 57B, the region, in which the electric fieldintensity is sufficient to cause the phase transition, is graduallywidened as the applied voltage V is further increased. The phasetransition is also caused in a region in which the distance between thepair of control electrodes 24 a, 24 b is long and in a region which isfar from the pair of control electrodes 24 a, 24 b (spread of the phasetransition region Zr). In this case, the dielectric constant of theanti-ferroelectric film 22 is further increased in accordance with thespread of the phase transition region Zt. The capacitance C, whichappears between the both terminal electrodes 40 a, 40 b, has acapacitance value C2 which is higher than the capacitance value C1obtained by the applied voltage V2.

[0453] As described above, the capacitance-variable capacitor, in whichthe capacitance C appearing between the both terminal electrodes 40 a,40 b is changed in the analog manner in accordance with the increase inthe voltage V applied to the pair of control electrodes 24 a, 24 b, canbe easily constructed by utilizing the ceramic element 100A according tothe first embodiment (especially of the analog displacement type).Moreover, the capacitance-variable capacitor can be constructed as athin-film type. Therefore, it is possible to facilitate miniaturizationof, for example, parametric amplifiers incorporated with the variablecapacitor, automatic frequency control circuits (AFC), and various typesof communication instruments.

[0454] Next, the capacitance-variable capacitor 220B concerning thesecond applied embodiment will be explained with reference to FIG. 58.Components or parts corresponding to those shown in FIG. 56A aredesignated by the same reference numerals, duplication explanation ofwhich will be omitted.

[0455] As shown in FIG. 58, the capacitance-variable capacitor 220Bconcerning the second applied embodiment is constructed in approximatelythe same manner as the capacitance-variable capacitor 220A concerningthe first applied embodiment. However, the former is different from thelatter in that the film thickness distribution of the anti-ferroelectricfilm 22 involves dispersion of not less than 20%, the pair of electrodes24 a, 24 b formed on the upper surface of the anti-ferroelectric film 22are used as the both terminal electrodes of the capacitor, and the upperelectrode 40 a and the lower electrode 40 b formed on the upper andlower surfaces of the anti-ferroelectric film 22 are used as the pair ofcontrol electrodes (upper and lower control electrodes).

[0456] In this embodiment, in the same manner as thecapacitance-variable capacitor 220A concerning the first appliedembodiment, it is possible to easily construct the capacitance-variablecapacitor wherein the capacitance C, which appears between the bothterminal electrodes 24 a, 24 b formed on the anti-ferroelectric film 22,is changed in the analog manner in accordance with the increase in thevoltage V applied between the upper control electrode 40 a and the lowercontrol electrode 40 b.

[0457] The embodiments described above are illustrative of theapplication of the ceramic elements 100A to 100C according to the firstto third embodiments to the display device 200, the relay device 210,and the capacitance-variable capacitor (220A, 220B). Besides, thepresent invention is also applicable to filters, various sensors such asultrasonic sensors, angular velocity sensors, acceleration sensors, andshock sensors, microphones, sounding bodies (speakers or the like),discriminators, and vibrators, resonators, and oscillators for powergeneration and communication. The present invention is also applicableto actuators to be used for, for example, servo displacement elements,pulse driving motors, ultrasonic motors, and piezoelectric fans.

[0458] Various illustrative embodiments of the ceramic element accordingto the present invention and various applied embodiments for applyingthe ceramic element to the display device, the relay device, and thecapacitance-variable capacitor have been specifically explained.However, the present invention should not be interpreted to be one whichis limited to the display device, the relay device, and thecapacitance-variable capacitor concerning the illustrative embodimentsand the applied embodiments. Various changes, modifications, andimprovements may be made thereto without deviating from the scope of thepresent invention.

INDUSTRIAL APPLICABILITY

[0459] As described above, the ceramic element according to the presentinvention comprises an operating section having an anti-ferroelectricfilm and at least a pair of electrodes formed on the anti-ferroelectricfilm, a vibrating section for supporting the operating section, and afixed section for supporting the vibrating section in a vibratingmanner, wherein the anti-ferroelectric film after polarization has aregion in which its average dielectric constant is changed in an analogmanner in accordance with a voltage applied to the electrodes.

[0460] Accordingly, the following effect is achieved. That is, themechanical displacement amount is changed in an analog manner inaccordance with the applied voltage. Further, the displacement amount,which is equivalent to that obtained upon application of the drivingvoltage, can be maintained in the no voltage-loaded state aftercompletion of application of the driving voltage.

[0461] Therefore, it is possible to precisely control the magnitude ofdisplacement amount in response to the applied voltage, and obtain alarge displacement-generating force exceeding those obtained by thepiezoelectric/electrostrictive film-type element even when a minuteelement is used. Thus, it is possible to simplify electric wiring fordriving the element and effectively reduce the production cost when avariety of applications (for example, display devices and filters) areconstructed.

[0462] Further, according to the present invention, there is providedthe display device comprising an optical waveguide plate for introducinglight thereinto, and a driving unit provided opposingly to one platesurface of the optical waveguide plate and including a number ofactuator elements arranged corresponding to a large number of pictureelements, for displaying, on the optical waveguide plate, a pictureimage corresponding to an image signal by controlling leakage light at apredetermined portion of the optical waveguide plate by controllingdisplacement action of each of the actuator elements in a direction tomake contact or separation with respect to the optical waveguide platein accordance with an attribute of the image signal to be inputted;wherein the actuator element comprises a main actuator element having ananti-ferroelectric film and at least a pair of electrodes formed on theanti-ferroelectric film, a vibrating section for supporting the mainactuator element, and a fixed section for vibratingly supporting thevibrating section, the display device further comprising adisplacement-transmitting section for transmitting, to the opticalwaveguide plate, the displacement action of the actuator elementgenerated by applying a voltage to the pair of electrodes.

[0463] Accordingly, the following effect is achieved. That is, thedisplay device consumes less electric power, and it is possible tosimplify electric wiring for driving the display device. Further it ispossible to effectively reduce the production cost and the running cost.

[0464] Further, according to the present invention, there is providedthe relay device comprising an opposing terminal section, and a drivingunit provided opposingly to one side of the opposing terminal sectionand including a number of actuator elements arranged corresponding to alarge number of switching elements, for switching and controlling ON/OFFoperation of the switching element by controlling displacement action ofeach of the actuator elements in a direction to make contact orseparation with respect to the opposing terminal section in accordancewith an attribute of a driving signal to be inputted; wherein theactuator element comprises a main actuator element having ananti-ferroelectric film and at least a pair of electrodes formed on theanti-ferroelectric film, a vibrating section for supporting the mainactuator element, and a fixed section for vibratingly supporting thevibrating section, the relay device further comprising a signal terminalsection for transmitting, to the opposing terminal section, thedisplacement action of the actuator element generated by applying avoltage to the pair of electrodes.

[0465] Accordingly, the following effect is achieved. That is, the relaydevice consumes less electric power, and it is possible to simplifyelectric wiring for driving the relay device. Further, it is possible toeffectively reduce the production cost and the running cost, and realizevarious types of switching operations.

[0466] Further, according to the present invention, there is providedthe capacitor comprising a vibrating section for supporting a capacitorunit, and a fixed section for vibratingly supporting the vibratingsection, wherein the capacitor unit comprises an anti-ferroelectric filmformed on the vibrating section, a pair of control electrodes formed onan upper surface of the anti-ferroelectric film, and both terminalelectrodes of the capacitor formed on the upper surface and a lowersurface of the anti-ferroelectric film.

[0467] Accordingly, the following effect is achieved. That is, it ispossible to easily construct a capacitance-variable capacitor in whichthe capacitance is changed in an analog manner. Further, the capacitorcan be formed as one of the thin type. Therefore, it is possible tofacilitate miniaturization of, for example, parametric amplifiersincorporated with the variable capacitor, automatic frequency controlcircuits (AFC), and various types of communication instruments.

We claim:
 1. A method for producing a ceramic element comprising anoperating section having an anti-ferroelectric film and at least a pairof electrodes formed on said anti-ferroelectric film, a vibratingsection for supporting said operating section, and a fixed section forsupporting said vibrating section in a vibrating manner, said methodcomprising the steps of: stacking ceramic green sheets or ceramic greentapes followed by integrated sintering to prepare a substrate havingsaid vibrating section and said fixed section; forming saidanti-ferroelectric film on said vibrating section of said substrate; andsintering said anti-ferroelectric film.
 2. The method for producing saidceramic element according to claim 1, wherein said anti-ferroelectricfilm is subjected to a sintering treatment while applying a load.
 3. Themethod for producing said ceramic element according to claim 2, whereinsaid load is not less than 0.4 kg/cm².
 4. The method for producing saidceramic element according to claim 1, wherein an anti-ferroelectricceramic material is prepared to have a powder composition which isdeviated from an optimum composition when a powder of saidanti-ferroelectric ceramic material is prepared to produce saidanti-ferroelectric film, while speculating variation in composition dueto mutual diffusion with respect to said vibrating section during saidsintering for said anti-ferroelectric film.
 5. The method for producingsaid ceramic element according to claim 4, wherein ZrO₂ is weighed in anamount smaller than its prescribed amount, and TiO₂ is weighed in anamount larger than its prescribed amount.
 6. The method for producingsaid ceramic element according to claim 5, wherein said amount of ZrO₂is 95 to 98% provided that said prescribed amount is 100%, and/or saidamount of TiO₂ is 102 to 104% provided that said prescribed amount is100%.
 7. The method for producing said ceramic element according toclaim 1, wherein when a powder of an anti-ferroelectric ceramic materialis prepared to produce said anti-ferroelectric film, said powder ispreviously prepared in a composition in which lead oxide is contained inan amount smaller than its prescribed blending amount, and then anamount of shortage of lead component is compensated and mixed afterwardin a form of lead oxide.
 8. The method for producing said ceramicelement according to claim 7, wherein an amount of post-compensation forsaid lead component is not less than 3% and not more than 20% of saidprescribed blending amount.
 9. The method for producing said ceramicelement according to claim 8, wherein said amount of post-compensationfor said lead component is not less than 5% and not more than 15% ofsaid prescribed blending amount.
 10. The method for producing saidceramic element according to claim 1, wherein when a powder of ananti-ferroelectric ceramic material is prepared to produce saidanti-ferroelectric film, a specific surface area of tin oxide to be usedas a raw material is not less than 8 m²/g and not more than 20 m²/g. 11.The method for producing said ceramic element according to claims 1,wherein said substrate made of ceramic is produced by stacking a secondlayer provided with a window, a third layer to be superimposed on oneside of said second layer so that said window is covered therewith, anda first layer to be superimposed on the other side of said second layerso that said window is covered therewith, said first layer having one ormore through-holes at a position corresponding to said window, followedby integrated sintering.
 12. The method for producing said ceramicelement according to claim 1, wherein a paste composed of a ceramicmaterial is formed as a pattern on an upper surface of a first layerhaving one or more through-holes, a second layer having a window isformed at a portion corresponding to said through-holes, and then athird layer is stacked to close said window, followed by integratedsintering to produce said substrate made of ceramic.
 13. The method forproducing said ceramic element according to claim 11, wherein athickness of said second layer is 1 to 15 μm.
 14. A display devicecomprising an optical waveguide plate for introducing light thereinto,and a driving unit provided opposingly to one plate surface of saidoptical waveguide plate and including a number of actuator elementsarranged corresponding to a large number of picture elements, fordisplaying, on said optical waveguide plate, a picture imagecorresponding to an image signal by controlling leakage light at apredetermined portion of said optical waveguide plate by controllingdisplacement action of each of said actuator elements in a direction tomake contact or separation with respect to said optical waveguide platein accordance with an attribute of said image signal to be inputted,wherein said actuator element comprises: a main actuator element havingan anti-ferroelectric film and at least a pair of electrodes formed onsaid anti-ferroelectric film; a vibrating section for supporting saidmain actuator element; and a fixed section for vibratingly supportingsaid vibrating section; said display device further comprising adisplacement-transmitting section for transmitting, to said opticalwaveguide plate, said displacement action of said actuator elementgenerated by applying a voltage to said pair of electrodes.
 15. Acapacitor comprising: a vibrating section for supporting a capacitorunit; and a fixed section for vibratingly supporting said vibratingsection, wherein: said capacitor unit comprises an anti-ferroelectricfilm formed on said vibrating section, a pair of control electrodesformed on an upper surface of said anti-ferroelectric film, and bothterminal electrodes of said capacitor formed on said upper surface and alower surface of said anti-ferroelectric film respectively.